Polygonum orientale with beautiful red flowers can be found as one dominant species in the vicinity of most water bodies and wetlands in China. However, its phytoremediation potential has not been sufficiently explored because little is known about its resistance to inorganic or organic pollutants. We investigated P. orientale response to low and moderate levels of phenol stress (≤ 80 mg L-1). Endpoints included phenol tolerance of P. orientale and the removal of the pollutant, antioxidant enzyme activities, damage to the cell membrane, osmotic regulators and photosynthetic pigments. In plant leaves, phenol stress significantly increased the activities of peroxidase (POD) and catalase (CAT), as well as the contents of proline, soluble sugars and carotenoids, whereas superoxide dismutase (SOD), H2O2 and electrolyte leakage (EL) levels remained unaltered. On the other hand, there were significant decreases of soluble protein and chlorophyll contents. We demonstrated that, in combination with phenol tolerance and its removal, P. orientale has efficient protection mechanisms against phenol-induced oxidative damage (≤ 80 mg L-1). We propose that P. orientale could be used as an alternative and interesting material in the phytoremediation of phenol.

A low drop-out [LDO] voltage regulator with fast transient response which does not require a capacitor for proper operation is proposed in this paper. Recent cap-less LDOs do not use off chip capacitor but instead they use on chip capacitor which occupy a large area on the chip. In the proposed LDO, this on chip capacitor is also avoided. A novel secondary local feedback technique is introduced which helps to achieve a good transient response even in the absence of output capacitor. Further an error amplifier that does need compensation capacitor is selected to reduce the on chip area. Stability analysis shows that the proposed LDO is stable with a phase margin of 78°. The proposed LDO is laid out using Cadence Virtuoso in 180 nm standard CMOS technology. Post layout simulation is carried out and LDO gives 6mV=V and 360µV=mA line and load regulation respectively. An undershoot of 120 mV is observed during the load transition from 0 mA to 50 mA in 1 µs transition time, however LDO is able to recover within 1:4 µs. Since capacitor is not required in any part of design, it occupies only 0:010824 mm2 area on the chip.

In this investigation, the effects of genistein (GEN) on the expression of steroidogenic genes such as steroidogenic acute regulatory protein (StAR), side-chain cleavage enzymes (P450scc) and cytochrome P450 aromatase (CYP19) were assessed. For this study, forty young female Sprague Dawley (SD) rats at aged 2-3 months (200±20 g) and forty aged female SD rats aged 10-12 months (490±20 g) were selected. Also, based on weight they were divided into a negative control group (NC), three different GEN dose groups, which received GEN of 15, 30, 60 mg/kg, and a positive control group (PC). The experiment lasted 30 days. Concentrations of serum hormones were determined by Enzyme-linked immunosorbent assay (ELISA). Gene and protein expressions of StAR, P450scc and CYP19 were determined by Real-Time PCR and western blot techniques. It was observed that 30-60 mg/kg GEN could increase the expression of androgen generating key enzymes in the young rat ovary. GEN also significantly increased progesterone and E2 levels in the serum of aged rats and reduced the levels of LH and FSH in the serum of both young and aged rats. Compared with young rats, the effect of GEN on the ovary of aged rats was stronger and a lower dose of GEN (15 mg/kg) showed an obvious effect on these indicators. GEN influenced both estrogen level and indicators associated with estrogen and androgen transformation processes, which indicates that GEN can impair the growth and maturation of the ovary.

A new simple design methodology which makes LDR output nearly insensitive to jumps of the load current for long times is proposed. This methodology is tested for more than 104 seconds. Our procedure leans on cross coupling of the time second derivative of the LDR power transistor gate and drain voltages along with their currents. This technique keeps low values of these currents in order of nano or hundreds of micro amperes for undershot or overshot cases, respectively. The introduced methodology has been applied to a standard CMOS of 0.18μm technology for NMOS transistors and validated using MATLAB R2014a.

The Bulletin of the Polish Academy of Sciences: Technical Sciences (Bull.Pol. Ac.: Tech.) is published bimonthly by the Division IV Engineering Sciences of the Polish Academy of Sciences, since the beginning of the existence of the PAS in 1952. The journal is peer‐reviewed and is published both in printed and electronic form. It is established for the publication of original high quality papers from multidisciplinary Engineering sciences with the following topics preferred: Artificial and Computational Intelligence, Biomedical Engineering and Biotechnology, Civil Engineering, Control, Informatics and Robotics, Electronics, Telecommunication and Optoelectronics, Mechanical and Aeronautical Engineering, Thermodynamics, Material Science and Nanotechnology, Power Systems and Power Electronics.

Journal Metrics: JCR Impact Factor 2018: 1.361, 5 Year Impact Factor: 1.323, SCImago Journal Rank (SJR) 2017: 0.319, Source Normalized Impact per Paper (SNIP) 2017: 1.005, CiteScore 2017: 1.27, The Polish Ministry of Science and Higher Education 2017: 25 points.

Abbreviations/Acronym: Journal citation: Bull. Pol. Ac.: Tech., ISO: Bull. Pol. Acad. Sci.-Tech. Sci., JCR Abbrev: B POL ACAD SCI-TECH Acronym in the Editorial System: BPASTS.