The effect of combination grain refinement with AlTi5B1 master (55 ppm) and Sr-modification with AlSr5 master (20, 30, 40, 50 and 60 ppm) on the microstructure, tensile and hardness properties of AlSi7MgTi cast alloy were systematically investigated. Eutectic silicon was studied by optical and scanning electron microscopy after standard (0.5% HF) and deep etching (HCl). Morphology of eutectic Si changes from compact plate-like (as-cast state) to fibbers (after modification). Si-fibbers in samples with 50 and 60 ppm Sr coarsen probably as a result of over-modification. The optimum mechanical properties has the experimental material which was grain refined and modified with 40 ppm of Sr (UTS = 220.6 MPa; ductility = 6.1%, and 82.3 HBW 5/250/15).

In this work we report on fabrication of quantum wires and quantum point contacts from the modulation doped CdMgTe/Cd(Mn)Te structures, with the application of a high-resolution electron-beam lithography. We emphasize on methods which were not yet utilized for these substrate materials. In particular, we describe the so-called shallow-etching approach, which allows for the fabrication of quantum constrictions of a physical width down to 100 nm, which are characterized by the smoother confining potential as compared to the deep-etched devices. For that purpose, a single-line exposure mode of electron-beam lithography has been used. We demonstrate also, how to combine the etching of separating grooves with the thermal evaporation of metal side-gates into a single post-processing stage of a quantum point contact fabrication.

This article is an expanded version of the scientific reports presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland.

Self-hardening aluminium alloys represent a new and interesting group of aluminium alloys. They have the advantage that they do not need to be heat treated, which is an important advantage that contributes to a significant reduction in production costs of some components and in the amount of energy used. The present paper deals with the possibility to replace the most used heat treatable AlSi7Mg0.3 cast alloys with a self-hardened AlZn10Si8Mg cast alloy. In this study, microstructural characterization of tensile and fatigue-tested samples has been performed to reveal if this replacement is possible. The results of fatigue tests show that AlSi7Mg0.3 alloy after T6 heat treatment and self-hardened AlZn10Si8Mg has comparable values of fatigue properties. The self-hardening alloy has slightly lower strength, ductility, and hardness.

The effect of possible modification and refining effect of Al-Cu-P-based pre-alloy combined with Fe on the microstructure and the silicon morphology change in hypereutectic Al-Si cast alloy was studied. The samples in the as-cast state were observed by optical and scanning electron microscopy with energy-dispersive X-ray spectroscopy. The 3D morphology of both primary and eutectic silicon was observed by using colour and deep etching in detail. The results showed that the AlCu19P1.4 pre-alloy (1.07 wt.%) combined with the addition of Fe (0.02 wt.%) has a significant effect on the change of the amount, size and morphology of primary Si. This is significantly refined and changes the shape from a coarse irregular star-shaped, polyhedral, or plate-like shape to a fine polyhedral shape. The average size of the primary Si is reduced by about of 78 % from 135 μm to 28 μm and the number of primary Si particles increased from 7.4 to 237. No change in the morphology of the eutectic Si was observed; a refinement of the structure from a coarse needle/plate-like to a fine plate-like structure was seen. The depth etching method using HCl was very effective in the study of the 3D silicon morphology observed, which could be observed in detail without the presence of artefacts.

This article presents the research results on impact of the method of polycrystalline graphene layers separation from the growth substrate on the obtained carbon material quality. The studies were carried out on graphene sheets obtained by metallurgical method on a liquid metal substrate (HSMG® graphene). The graphene was separated using chemical etching method or the electrochemical delamination method, by separating by means of electrolysis. During electrolysis, hydrogen is emitted on a graphene-covered of cathode (metal growth substrate) as a result of the voltage applied. The graphene layer breaks away from metallic substrate by gas accumulation between them. The results from these separation processes were evaluated by means of different tools, such as SEM, TEM and AFM microscopy as well as Raman Spectroscopy. In summary, the majority of analyses indicate that the graphene obtained as a result of hydrogen delamination possesses higher purity, smaller size and number of defects, its surface is smooth and less developed after the transfer process to the target substrate.

Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes responsible for modification of these properties under the etching. Possibilities are discussed that ion etching opens for defect studies in HgCdTe, including detecting electrically neutral tellurium nanocomplexes, determining background donor concentration in the material of various origins, and understanding the mechanism of arsenic incorporation in molecular-beam epitaxy-grown films.

This paper presents research on the deposition of an indium tin oxide (ITO) layer which may act as a recombination layer in a silicon/perovskite tandem solar cell. ITO was deposited by magnetron sputtering on a highly porous surface of silicon etched by the metal-assisted etching method (MAE) for texturing as nano and microwires. The homogeneity of the ITO layer and the degree of coverage of the silicon wires were assessed using electron microscopy imaging techniques. The quality of the deposited layer was specified, and problems related to both the presence of a porous substrate and the deposition method were determined. The presence of a characteristic structure of the deposited ITO layer resembling a "match" in shape was demonstrated. Due to the specificity of the porous layer of silicon wires, the ITO layer should not exceed 80 nm. Additionally, to avoid differences in ITO thickness at the top and base of the silicon wire, the layer should be no thicker than 40 nm for the given deposition parameters.

The development of power industry obligates designers, materials engineers to create and implement new, advanced materials, in which Inconel 617 alloy is included. Nowadays, there are a lot of projects which describe microstructure and properties of Inconel 617 alloy. However, the welded joints from mentioned material is not yet fully discussed in the literature. The description of welded joints microstructure is a main knowledge source for designers, constructors and welding engineers in estimating durability process and degradation assessment for elements and devices with welds of Inconel 617 alloy. This paper presents the analysis and assessment of advanced nickel alloy welded joints, which have been done by tungsten inert gas (TIG). Investigations have included analysis made by light microscope and scanning electron microscope. The disclosed precipitates were identified with Energy Dispersive Spectroscopy (EDS) microanalysis, then it were done X-Ray Diffraction (XRD) phases analysis. To confirm the obtained results, a scanning-transmission electron microscope (STEM) analysis was also performed.

The purpose of the article was to create a comprehensive procedure for revealing the Inconel 617 alloy structure. The methodology presented in this article will be in future a great help for constructors, material specialists and welding engineers in assessing the structure and durability of the Inconel 617 alloy.

The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtaining a smoother sidewall morphology. Next, five periodic mesa-shaped structures were etched under identical conditions, but using a different time. The results indicated that the ICP-RIE method using a BCl3 flow rate of 7 sccm, ICP:RIE power ratio of 300W:270W allowed the ICP:RIE formation of a periodic mesa-shaped structure with smooth and perpendicular sidewalls.

In our studies the absorption, transmittance and reflectance spectra for periodic nanostructures with different parameters were calculated by the FDTD (Finite-Difference Time-Domain) method. It is shown that the proportion of reflected light in periodic structures is smaller than in case of thin films. The experimental results showed the light reflectance in the spectral range of 400–900 nm lower than 1% and it was significantly lower in comparison with surface texturing by pyramids or porous silicon.

Silicon nanowires on p-type Si substrate were formed by the Metal-Assisted Chemical Etching method (MacEtch). At solar cells with radial p-n junction formation the thermal diffusion of phosphorus has been used at 790°C. Such low temperature ensures the formation of an ultra-shallow p-n junction. Investigation of the photoelectrical properties of solar cells was carried out under light illumination with an intensity of 100 mW/cm². The obtained parameters of NWs' solar cell were I_sc = 22 mA/cm², U_oc = 0.62 V, FF = 0.51 for an overall efficiency η = 7%. The relatively low efficiency of obtained SiNWs solar cells is attributed to the excessive surface recombination at high surface areas of SiNWs and high series resistance.