In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.

A thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst ≈ 0.8 μm), GaSb-based laser diodes (λst ≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermal RTCT equivalent circuit (the Foster and Cauer models), where RT is the thermal resistance and CT is the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

Experimental methods are presented for determining the thermal resistance of vertical-cavity surfaceemitting lasers (VCSELs) and the lateral electrical conductivity of their p-type semiconductor layers. A VCSEL structure was manufactured from III-As compounds on a gallium arsenide substrate. Conductivity was determined using transmission line measurement (TLM). Electrical and thermal parameters were determined for various ambient temperatures. The results could be used for computer analysis of VCSELs. Keywords: TLM, thermal resistance, VCSEL, AlGaAs.

The paper presents four 1-dimensional models of thermal resistance of walls in a heat exchanger with rectangular minichannels. The first model is the simplest one, with a single wall separating two fluids. The second model of the so called equivalent wall takes into account total volume of intermediate walls between layers of minichannels and of side walls of minichannels. The next two more complicated models take separately into account thermal resistance of these walls. In these two models side walls are treated as fins. The results of models comparison are presented. It is shown that thermal resistance may be neglected for metal walls but it should be taken into account for the walls made of plastics. For the case of non-neglected wall thermal resistance the optimum wall thickness was derived. Minichannel heat exchangers made of plastic are larger than those built of metal, but are significantly cheaper. It makes possible to use of such exchangers in inexpensive microscale ORC installations.

The effect of modifications in epi-side (top) gold metallization on a thermal performance and on power roll-over of blue-vio- let III-N-based p-up edge-emitting ridge-waveguide laser diode (RW EEL) was explored in this paper. The calculations were carried out using a two-dimensional self-consistent electrical-thermal model combined with a simplified optical model tuned to a RW EEL fabricated in the Institute of High Pressure Physics (Unipress). Our results suggest that with proper modifica- tions in the III-N-based RW EEL, excluding modifications in its inner structure, it is possible to considerably improve the thermal performance and, thus, increase the maximal output power.