Tytuł artykułu

Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer

Tytuł czasopisma

Archives of Metallurgy and Materials

Rocznik

2024

Wolumin

vol. 69

Numer

No 2

Autorzy

Kim, Hogyoung ; Won, Ye Bin ; Choi, Byung Joon

Afiliacje

Kim, Hogyoung : Seoul National University of Science and Technology, Department of Visual Optics, Seoul 01811, Korea ; Won, Ye Bin : Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea ; Choi, Byung Joon : Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea

Słowa kluczowe

ZnO interlayer ; GaN ; Inhomogeneous Schottky barrier ; Interface states

Wydział PAN

Nauki Techniczne

Zakres

459-463

Wydawca

Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences

Data

21.06.2024

Typ

Article

Identyfikator

DOI: 10.24425/amm.2024.149766 ; e-ISSN 2300-1909