In this paper, the usage of graphene transistors is introduced to be a suitable solution for extending low power designs. Static and current mode logic (CML) styles on both nanoscale graphene and silicon FINFET technologies are compared. Results show that power in CML styles approximately are independent of frequency and the graphene-based CML (GCML) designs are more power-efficient as the frequency and complexity increase. Compared to silicon-based CML (Si-CML) standard cells, there is 94% reduction in power consumption for G-CML counterparts. Furthermore, a G-CML 4-bit adder respectively offers 8.9 and 1.7 times less power and delay than the Si-CML adder.

The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp transimpedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√ Hz, 3 nV/√ Hz, 0.95 nV/√Hz and 0.6 nV/√ Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A −3 dB frequency response is from ∼ 20 mHz to ∼ 600 kHz.

In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access transistors to improve the stability and also makes it a dual port memory cell. The proposed cell uses a header scheme in which one extra PMOS transistor is used which is biased at different voltages to improve the read and write stability thus, helps in reducing the leakage power and active power. The cell shows improvement in RSNM (Read Static Noise Margin) with LP8T by 2.39x at sub-threshold voltage 2.68x with D6T SRAM cell, 5.5x with TG8T. The WSNM (Write Static Noise Margin) and HM (Hold Margin) of the SRAM cell at 0.9V is 306mV and 384mV. At sub-threshold operation also it shows improvement. The Leakage power reduced by 0.125x with LP8T, 0.022x with D6T SRAM cell, TG8T and SE8T. Also, impact of process variation on cell stability is discussed.

ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C–Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C–Pd layer. The C–Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C–Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C–Pd layer was demonstrated and characterized.

This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW\Hz ^1/2 and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated.