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Abstract

The dual-band avalanche photodiode (APD) detector based on a HgCdTe material system was designed and analysed in detail numerically. A theoretical analysis of the two-colour APD intended for the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges was conducted. The main purpose of the work was to indicate an approach to select APD structure parameters to achieve the best performance at high operating temperatures (HOT). The numerical simulations were performed by Crosslight numerical APSYS platform which is designed to simulate semiconductor optoelectronic devices. The current-voltage characteristics, current gain, and excess noise analysis at temperature T = 230 K vs. applied voltage for MWIR (U = 15 V) and LWIR (U = –6 V) ranges were performed. The influence of low and high doping in both active layers and barrier on the current gain and excess noise is shown. It was presented that an increase of the APD active layer doping leads to an increase in the photocurrent gain in the LWIR detector and a decrease in the MWIR device. The dark current and photocurrent gains were compared. Photocurrent gain is higher in both spectral ranges.
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Authors and Affiliations

Tetiana Manyk
1
ORCID: ORCID
Kinga Majkowycz
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID
Piotr Martyniuk
1
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
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Abstract

Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by bias-selectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dual-band detectors was also improved. Finally, a 20 μm pitch 640 × 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.
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Authors and Affiliations

Hyun-Jin Lee
1
ORCID: ORCID
Jun Ho Eom
1
Hyun Chul Jung
1
Ko-Ku Kang
1
Seong Min Ryu
1
Ahreum Jang
1
Jong Gi Kim
1
Young Ho Kim
1
Han Jung
1
Sun Ho Kim
2
Jong Hwa Choi
2

  1.  i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
  2. Agency of Defense Development, 34186 P.O.Box 35, Yuseong-gu, Daejeon, Republic of Korea

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