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Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer

Hogyoung Kim Ye Bin Won Byung Joon Choi

Archives of Metallurgy and Materials | 2024 | vol. 69 | No 2 | 459-463 | DOI: 10.24425/amm.2024.149766

Keywords ZnO interlayer GaN Inhomogeneous Schottky barrier Interface states

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Abstract

Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the Pt/ZnO/GaN heterojunctions were electrically characterized. The analyses on the current–voltage (I–V) and capacitance (C–V) data showed that the forward I–V conduction was involved with the inhomogeneous Schottky barrier. The higher density of interface states from I–V data than that from C–V data was attributed to nonuniform distribution of interface states. In addition, high density of interface states caused localized high electric field, caused higher Poole Frenkel emission coefficients than the theoretical one.

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Authors and Affiliations

Hogyoung Kim

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ORCID:

Ye Bin Won

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ORCID:

Byung Joon Choi

e-mail:

ORCID:

Seoul National University of Science and Technology, Department of Visual Optics, Seoul 01811, Korea
Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea

Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO₂/HfO₂ Bilayer Devices

Min Gyoo Cho Jae Hee Go Byung Joon Choi

Archives of Metallurgy and Materials | 2024 | vol. 69 | No 2 | 463-466 | DOI: 10.24425/amm.2024.149767

Keywords Atomic layer deposition bilayer self-rectifying memory rectification ratio

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Abstract

Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface between insulating layer and electrodes are crucial to achieve highly self-rectifying memory cell. In this study, bilayer devices composed of HfO₂ and TiO₂ were fabricated using atomic layer deposition (ALD) for the implementation of self-rectifying memory cells. The physical, chemical, and electrical properties of HfO₂/TiO₂ and TiO₂/HfO₂ sandwiched between Pt and TiN electrodes were investigated. By analyzing the conduction mechanism of bilayer devices, the higher rectification ratio of TiO₂/HfO₂ stack was due to the difference in height and the number of energy barriers.

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Authors and Affiliations

Min Gyoo Cho

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Jae Hee Go

Byung Joon Choi

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Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Korea

Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films

Sung Yeon Ryu Hee Ju Yun Min Hwan Lee Byung Joon Choi

Archives of Metallurgy and Materials | 2021 | vol. 66 | No 3 | 755-758 | DOI: 10.24425/amm.2021.136375

Keywords gadolinium oxide (Gd2O3) rare-earth oxide atomic layer deposition hydrophobicity electrical property

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Abstract

Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.

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Bibliography

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[2] A. Karimaghaloo, J. Koo, H. sen Kang, S.A. Song, J.H. Shim, M.H. Lee, International Journal of Precision Engineering and Manufacturing - Green Technology 6, 611 (2019).
[3] G . Azimi, R. Dhiman, H.M. Kwon, A.T. Paxson, K.K. Varanasi, Nature Materials 12, 315 (2013).
[4] I .K. Oh, K. Kim, Z. Lee, K.Y. Ko, C.W. Lee, S.J. Lee, J.M. Myung, C. Lansalot-Matras, W. Noh, C. Dussarrat, H. Kim, H.B.R. Lee, Chemistry of Materials 27, 148 (2015).
[5] M. Leskelä, K. Kukli, M. Ritala, Journal of Alloys and Compounds 418, 27 (2006).
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[8] H. Kim, H.J. Yun, B.J. Choi, RSC Advances 8, 42390 (2018).
[9] J.H. Shim, G.D. Han, H.J. Choi, Y. Kim, S. Xu, J. An, Y.B. Kim, T. Graf, T.D. Schladt, T.M. Gür, F.B. Prinz, International Journal of Precision Engineering and Manufacturing - Green Technology 6, 629 (2019).
[10] K. Xu, R. Ranjith, A. Laha, H. Parala, A.P. Milanov, R.A. Fischer, E. Bugiel, J. Feydt, S. Irsen, T. Toader, C. Bock, D. Rogalla, H.J. Osten, U. Kunze, A. Devi, Chemistry of Materials 24, 651 (2012).
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[12] D. Kim, D. Ha Kim, D.H. Riu, B.J. Choi, Archives of Metallurgy and Materials 63, 1061 (2018).
[13] M. Mishra, P. Kuppusami, S. Ramya, V. Ganesan, A. Singh, R. Thirumurugesan, E. Mohandas, Surface and Coatings Technology 262, 56 (2015).
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Authors and Affiliations

Sung Yeon Ryu

Hee Ju Yun

Min Hwan Lee

Byung Joon Choi

e-mail:

ORCID:

Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea
University of California Merced, Department of Mechanical Engineering, Merced, California, USA

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Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer

Abstract

Authors and Affiliations

Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices

Abstract

Authors and Affiliations

Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films

Abstract

Bibliography

Authors and Affiliations

Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO₂/HfO₂ Bilayer Devices