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Abstract

This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

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Authors and Affiliations

Damian Bisewski
Marcin Myśliwiec
Krzysztof Górecki
Ryszard Kisiel
Janusz Zarębski

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