Details
Title
The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristicsJournal title
Opto-Electronics ReviewYearbook
2022Volume
30Issue
2Authors
Affiliation
Manyk, Tetiana : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Rutkowski, Jarosław : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Madejczyk, Paweł : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Gawron, Waldemar : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, Poland ; Gawron, Waldemar : VIGO System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland ; Martyniuk, Piotr : Institute of Applied Physics, Military University of Technology, 2. Kaliskiego St., 00-908 Warsaw, PolandKeywords
HgCdTe ; MWIR detectors ; dark current ; I-V characteristics ; recombinationDivisions of PAS
Nauki TechniczneCoverage
e141596Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyBibliography
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