Applied sciences

Opto-Electronics Review


Opto-Electronics Review | 2015 | vol. 23 | No 2 |

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Over the last twenty years, there has been a growing interest in the design of tunable devices at microwave frequencies by us- ing liquid crystals technology. In particular, the use of liquid crystals with high dielectric anisotropy allows manufacturing voltage-controlled devices to operate in a wide frequency range. In this work the frequency response of a liquid crystal band-pass filter with dual-mode microstrip structure has been studied in depth by using a simulation software tool. A reshap- ing of a conventional dual-mode square patch resonator bandpass filter with a square notch, studied in the literature, has been proposed with the goal of improving the filter performance. The main features achieved are a significant increase in the return loss of the filter and a narrowing of a 3-dB bandwidth. Specifically, a reduction in the filter bandwidth from 800 MHz to 600 MHz, which leads to a return loss increase from 6 dB to 12.5 dB, has been achieved. The filter centre frequency can be tuned from 4.54 GHz to 5.19 GHz.

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Authors and Affiliations

J. Torrecilla
C. Marcos
V. Urruchi
J.M. Sánchez-Pena
O. Chojnowska
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Dye sensitized solar cells (DSSCs) based on indigo dyes exhibit suitable conversion efficiency. These organic dyes have been undergone for aggregation. Electron transfer process is reduced due to an aggregation of molecular dyes. Therefore, anti-aggregation agent is commonly utilized in fabrication of DSSCs. In the present study, two anti-aggregation agents namely as 3α,7α-dihydroxy-5β-cholanic acid (cheno) and 3α,7α,12α-trihydroxy-5β-cholanic acid (cholic acid) were added to indigo dye solution in DSSCs in order to determine the photovoltaic parameters such as short circuit photocurrent, open circuit voltage and conversion efficiency of each individual dye in the absence and presence of anti-aggregation agents. The results show that the conversion efficiencies are improved with reduced aggregation. Spectrophotometric evaluations of the indigo dyes in solution and on a TiO2 substrate were carried out in the absence and presence of anti-aggregation agents in order to estimate changes in the status of the dyes in different environments. J-type aggregates on the nano TiO2 are reduced in the presence of anti-aggregation agents.

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Authors and Affiliations

M. Hosseinnezhad
S. Moradian
K. Gharanjig
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The effect of modifications in epi-side (top) gold metallization on a thermal performance and on power roll-over of blue-vio- let III-N-based p-up edge-emitting ridge-waveguide laser diode (RW EEL) was explored in this paper. The calculations were carried out using a two-dimensional self-consistent electrical-thermal model combined with a simplified optical model tuned to a RW EEL fabricated in the Institute of High Pressure Physics (Unipress). Our results suggest that with proper modifica- tions in the III-N-based RW EEL, excluding modifications in its inner structure, it is possible to considerably improve the thermal performance and, thus, increase the maximal output power.

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Authors and Affiliations

M. Kuc
R.P. Sarzała
S. Stańczyk
P. Perlin
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Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

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Authors and Affiliations

N. Ali
R. Ahmed
A. Bakhtiar-Ul-Haq Shaari
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The performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 μm fabricated using metaloorganic chemi- cal vapour deposition operated at high temperatures is presented. The detectors’ architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-Bp′, n+-Bp′, p+-Bp) were analysed in terms of various electrical and optical properties of the detectors, such as dark current, current responsivity time constant and detectivity.

The devices with a p-type cap contact exhibit very low dark current densities in the range of (2÷3)×10-4 A/cm2 at 230 K and the maximum photoresponse of about 2 A/W in wide range of reverse bias voltage. The time constant of measured de- vices with n-type cap contact and p-type absorbing drops below 1 ns with reverse bias while the detectivity is at the level of 1010 cm Hz1/2/W.

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Authors and Affiliations

M. Kopytko
A. Kębłowski
W. Gawron
P. Madejczyk
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A review of night vision metrology is presented in this paper. A set of reasons that create a rather chaotic metrologic situation on night vision market is presented. It is shown that there has been made a little progress in night vision metrology during last decades in spite of a big progress in night vision technology at the same period of time. It is concluded that such a big discrep- ancy between metrology development level and technology development can be an obstacle in the further development of night vision technology.

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Authors and Affiliations

K. Chrzanowski
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An efficient operation of a Ho:YLF laser pumped by a Tm-doped fibre laser is reported. The research in a continuous-wave (CW) operation was done for two crystals of the same 0.5 at.%Ho dopant concentration and with different lengths (3×3×30 mm3 and 3×3×50 mm3). For an output coupling transmission of 20% and a crystal length of 50 mm, the maximum CWoutput power of 38.9 W for 81.4 W of incident pump power, corresponding to the slope efficiency of 52.3% and optical-to-optical conversion efficiency of 47.8% (determined with respect to the incident pump power) was achieved. The highest opti- cal-to-optical conversion efficiency of 70.2% with respect to the absorbed pump power was obtained. The influence of a heat-sink cooling water temperature on theCWlaser performance was studied. For a Q-switched operation the pulse repe- tition frequency (PRF) was changed from 2 to 10 kHz. The maximum average output power of 34.1 W at the PRF of 10 kHz was obtained for a 50 mm holmium crystal length. For 2 kHz PRF and 71.9 W of incident pump power, pulse energies of 13.7 mJ with a 21 ns FWHM pulse width corresponding to 652 kW peak power were recorded.

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Authors and Affiliations

J. Kwiatkowski
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In this work a review of investigations concerning interaction of intense extreme ultraviolet (EUV) and soft X-ray (SXR) pulses with matter is presented. The investigations were performed using laser-produced plasma (LPP) EUV/SXR sources based on a double stream gas puff target. The sources are equipped with dedicated collectors allowing for efficient focusing of the EUV/SXR radiation pulses. Intense radiation in a wide spectral range, as well as a quasi-monochromatic radiation can be produced. In the paper different kinds of LPP EUV/SXR sources developed in the Institute of Optoelectronics, Military University of Technology are described.

Radiation intensities delivered by the sources are sufficient for different kinds of interaction experiments including EUV/SXR induced ablation, surface treatment, EUV fluorescence or photoionized plasma creation. A brief review of the main results concerning this kind of experiments performed by author of the paper are presented. However, since the LPP sources cannot compete with large scale X-ray sources like synchrotrons, free electron lasers or high energy density plasma sources, it was indicated that some investigations not requiring extreme irradiation parameters can be performed using the small scale installations. Some results, especially concerning low temperature photoionized plasmas are very unique and could be hardly obtained using the large facilities.

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Authors and Affiliations

A. Bartnik

Editorial office

Opto-Electronics Review - Editorial Board

L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology <
M. KOPYTKO, Military University of Technology, Warsaw, Poland

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland

Language Editor

J. Kulesza, e-mail:

Technical Editors:

R.Podraza, e-mail:

E.Sadowska, e-mail:


Military University of Technology,

Gen. Sylwestra Kaliskiego St. 2,

00 – 908 Warsaw, Poland

Instructions for authors

Open Access policy

Opto-Electronics Review is an open access journal with all content available with no charge for readers in full text version. The journal content is available under the licencse CC BY-SA 4.0

Additional information

Opto-Electronics Review was established in 1992 for the publication of scientific papers concerning optoelectronics and photonics materials, system and signal processing. This journal covers the whole field of theory, experimental verification, techniques and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. Papers covering novel topics extending the frontiers in optoelectronics and photonics are very encourage. The main goal of this magazine is promotion of papers presented by European scientific teams, especially those submitted by important team from Central and Eastern Europe. However, contributions from other parts of the world are by no means excluded.

Articles are published in OPELRE in the following categories:

-invited reviews presenting the current state of the knowledge,

-specialized topics at the forefront of optoelectronics and photonics and their applications,

-refereed research contributions reporting on original scientific or technological achievements,

-conference papers printed in normal issues as invited or contributed papers.

Authors of review papers are encouraged to write articles of relevance to a wide readership including both those established in this field of research and non-specialists working in related areas. Papers considered as “letters” are not published in OPELRE.

Opto-Electronics Review is published quarterly as a journal of the Association of Polish Electrical Engineers (SEP) and Polish Academy of Sciences (PAS) in cooperation with the Military University of Technology and under the auspices of the Polish Optoelectronics Committee of SEP.

Abstracting and Indexing:

Current Contents - Physical, Chemical & Earth Sciences

Current Contents - Engineering, Technology & Applied Sciences

Science Citation Index Expanded

Journal Citation Reports - Science Edition



Policies and ethics:

The editors of the journal place particular emphasis on compliance with the following principles:

Authorship of the paper: Authorship should be limited to those who have made a significant contribution to the conception, design, execution, or interpretation of the reported study.

Originality and plagiarism: The authors should ensure that they have written entirely original works, and if the authors have used the work and/or words of others, that this has been appropriately cited or quoted.

Data access and retention: Authors may be asked to provide the raw data in connection with a paper for editorial review, and should be prepared to provide public access to such data.

Multiple, redundant or concurrent publication: An author should not in general publish manuscripts describing essentially the same research in more than one journal or primary publication.

Acknowledgement of sources: Proper acknowledgment of the work of others must always be given.

Disclosure and conflicts of interest: All submissions must include disclosure of all relationships that could be viewed as presenting a potential conflict of interest.

Fundamental errors in published works: When an author discovers a significant error or inaccuracy in his/her own published work, it is the author's obligation to promptly notify the journal editor or publisher and cooperate with the editor to retract or correct the paper.

Reporting standards: Authors of reports of original research should present an accurate account of the work performed as well as an objective discussion of its significance.

Hazards and human or animal subjects: Statements of compliance are required if the work involves chemicals, procedures or equipment that have any unusual hazards inherent in their use, or if it involves the use of animal or human subjects.

Use of patient images or case details: Studies on patients or volunteers require ethics committee approval and informed consent, which should be documented in the paper.

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