Abstract A conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm-1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.
A mode-locked Tm3+-doped fibre laser and amplifier operating at a central wavelength of 1994.3 nm is demonstrated. A thulium oscillator is passively mode-locked by a semiconductor saturable absorber mirror to generate an average power of 17 mW at a fundamental repetition rate of 81 MHz in a short linear cavity. This 2-µm laser train is amplified to an average power to 20.26 W by two double-clad thulium-doped allfibre amplifiers. The pulse energy, duration and peak power is 250 nJ, 23 ps and 9.57 kW, respectively. This represents one of the highest values of average power at ∼ 2-µm-wavelength for picosecond thulium-doped fibre lasers and amplifiers. The performance of the laser system is described in details.
The aim of this research was to fabricate and study the properties of Bi1-x DyxFeO3 (for x = 0, 0.05, 0.07, 0.1) ceramics materials. Simple oxide powders Bi2O3, Dy2O3 and Fe2O3 were used to fabricate Bi1-xDyxFeO3 ceramics by mixed oxide method followed by free sintering. The study presents changes in microstructure and crystal structure as well as in dielectric properties and magnetic properties caused by modification of BiFeO3 with dysprosium dopant.
Single crystalline cesium doped ZnO nanorods with homogeneous size and shape were grown hydrothermally on ITO substrates that are presented in our previous work. According to the previous work, XRD analysis showed that cesium doped ZnO nanorods are wurtzite single crystals and are grown preferentially along the c-axis. Also, the electrical conductivity of doped ZnO showed higher values for the 1% cesium, which confirmed incorporation of the cesium dopant. Cesium doped ZnO nanorods are suitable candidates for applications in solar cells. So, in this research, we employed cesium doped ZnO nanorods with the different dopant concentration in inverted polymer solar cell. By comparing the effect of doped ZnO nanorods with diverse dopant concentration (0, 0.5, 1.0, 1.5 and 2%) on the performance of devices, 1.0% cesium doped ZnO was found as the most effective doping level among the selected doping concentrations. Also, using 1.0% cesium doped ZnO nanorods, Jsc of 8.21 mA/cm², Voc of 0.541V and Fill Factor of 63.01% were achieved, which led to power conversion efficiency of 2.80%.
Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes responsible for modification of these properties under the etching. Possibilities are discussed that ion etching opens for defect studies in HgCdTe, including detecting electrically neutral tellurium nanocomplexes, determining background donor concentration in the material of various origins, and understanding the mechanism of arsenic incorporation in molecular-beam epitaxy-grown films.
The aims of this study were to enhance electronic, photophysical and optical properties of molecular semiconductors. For this purpose, the isomers of the B-doped molecule (5,5′-Dibromo-2,2′-bithiophene) have been investigated by density functional theory (DFT) based on B3LYP/6-311++G** level of theory. The isomers were first calculated using kick algorithm. The most stable isomers of the B-doped molecule are presented depending on the binding energy, fragmentation energy, ionization potential, electron affinity, chemical hardness, refractive index, radial distribution function and HOMO-LUMO energy gap based on DFT. Ultraviolet-visible (UV–vis) spectra have been also researched by time-dependent (TD) DFT calculations. The value of a band gap for isomer with the lowest total energy decreases from 4.20 to 3.47 eV while the maximum peaks of the absorbance and emission increase from 292 to 324 nm and 392 to 440 nm with boron doped into 5,5′-Dibromo-2,2′-bithiophene. Obtained results reveal that the B-doped molecule has more desirable optoelectronic properties than the pure molecule.
Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~1014 cm-3 was revealed. Films grown with metal−organic chemical vapour deposition and with MBE on GaAs substrates showed BDC of the order of ~1015 cm-3. A possibility of assessing the BDC in acceptor (arsenic)−doped HgCdTe was demon− strated. In general, the studies showed the effectiveness of ion milling as a method of reducing electrical compensation in n−type MCT and as an excellent tool for assisting evaluation of BDC.
We demonstrated two methods of increasing the bandwidth of a broadband light source based on amplified spontaneous emission in thulium-doped fibres. Firstly, we have shown by means of a comprehensive numerical model that the full-width at half maximum of the thulium-doped fibre based broadband source can be more than doubled by using specially tailored spectral filter placed in front of the mirror in a double-pass configuration of the amplified spontaneous emission source. The broadening can be achieved with only a small expense of the output power. Secondly, we report results of the experimental thulium-doped fibre broadband source, including fibre characteristics and performance of the thulium-doped fibre in a ring laser setup. The spectrum broadening was achieved by balancing the backward amplified spontaneous emission with back-reflected forward emission.
The work three ceramic compositions based on PbZr0.49Ti0.51O3 doped with manganese (Mn), antimony (Sb), lanthanum (La) and tungsten (W) were obtained. The introduction of a set of admixtures was aimed at improving the sinterability of ceramic materials and optimizing its electrophysical parameters. Multi-component materials of the PZT-type with a general formula: Pb(Zr0.49Ti0.51)0.94Mn0.021Sb0.016LayWzO3 (where y from 0.008 to 0.012 and z from 0.012 to 0.014) were prepared by the conventional mixed oxide method. After mixing and drying the powder mixtures were calcined in air at 850°C for 4 h, while densification of the powders was carried out by the free sintering method at 1150°C for 2 h. The final steps of technology were grinding, polishing, annealing and putting silver paste electrodes onto both surfaces of the samples for electrical testing.
XRD, SEM, EDS, dielectric, ferroelectric, piezoelectric properties and DC electrical conductivity of the obtained ceramic compositions were carried out. X-ray tests of the crystal structure conducted at room temperature have shown that all obtained the PZT-type materials were a single phase (perovskite type) without the presence of a foreign phase. Symmetry of the crystal lattice was identified as space group P4mm. Temperature dielectric studies have shown high values of dielectric permittivity and low dielectric loss. The presented physical properties of ceramic samples based on PZT confirm their predisposition for application in modern microelectronic and micromechatronic applications.
The paper presents the technology and basic properties of three compositions of lead-free ceramics: (i) (K0.44Na0.52Li0.04)NbO3, (ii) (K0.44Na0.52Li0.04)NbO3+0.5%mol Nd2O3 and (iii) (K0.44Na0.52Li0.04)NbO3+0.5%mol Pr2O3. Powders of the designed compositions based on KNLN were obtained with the classic ceramic technology, as a result of solid phase synthesis, from a mixture of simple oxides and carbonates. The synthesis of ceramic powders was carried out at Ts = 900°C for ts = 4 h, while compaction by free sintering at Tsint = 1100°C for tsint = 2 h.
XRD studies have shown that doping with praseodymium and neodymium promotes the formation of the tetragonal phase in the base composition (K0.44Na0.52Li0.04)NbO3 at lower temperatures. On the other hand, microstructural tests have shown that the admixture of neodymium and praseodymium improves the sinterability of ceramic samples during the technological process; however, the ceramic samples still exhibit high porosity.
A simple and robust method to generate a dual-wavelength mode-locked laser using a tunable Mach-Zehnder filter (TMZF) and a single-wall carbon nanotube (SWCNT) based saturable absorber (SA) is proposed and demonstrated. The proposed laser uses a thulium-doped fiber for lasing in the two-micron region and exploits the interferometric spectrum of the TMZF to produce dual peaks with nearly equal magnitude. SWCNT based SA enables mode-locking at a threshold value of 150.4 mW with distinct dual-wavelength peaks at 1919.2 nm and 1963.7 nm. The peaks have a calculated pulse width of 1.8 ps and 1.6 ps, respectively with a repetition rate of 9.1 MHz with a relatively high optical-signal-to-noise ratio value of 59.1 dB. The output is also observed to remain unchanged over time, indicating high stability. The proposed laser has a promising application, particularly in ultrafast gas molecular spectroscopy and sensing.
Transparent Al doped ZnO nanocrystalline films with a crystallite size less than 19 nm are obtained by spray pyrolysis. Band gap increases monotonically from 3.16 to 3.31 eV with increasing aluminum dopant up to 1.56 at.% facilitating increasing width of a transmission window in addition to the band gap tuning of 4.74% which compares favorably well with literature. UV emission with continuously increasing intensity is obtained which reflects on the good crystalline quality of the films. Also the defect emissions are suppressed remarkably as the dopant Al concentration increases in ZnO. The band gap tuning by quite small increment in dopant amount makes the present films, much attractive for the fabrication of light emitting devices with a much sought-for benefit of large area fabrication. FESEM shows the surface is granular with grain size lying in the range of 20–35 nm and EDX confirms the presence of Al in the doped samples.
In this paper our results of investigation on a pump power combiner in a configuration of 7×1 are presented. The performed combiner, with pump power of 80–85% transmission level, was successfully applied in a thulium doped fibre laser. The performed all-fibre laser setup reached a total CW output power of 6.42 W, achieving the efficiency on a 32.1% level
Photoactive nanofilled nematic is proposed. Stable three-component photoresponsive nanocomposite was prepared from photo-insensitive nanofilled nematic by inclusion of 3 wt.% azobenzene-containing photoactive mesogen 4-(4′-ethoxyphenylazo)phenyl hexanoate (EPH). The host nanofilled nematic was produced from the room-temperature nematic liquid crystal 4-n-heptyl cyanobiphenyl (7CB) and 3 wt.% filler of Aerosil 300 hydrophilic silica nanospheres of size 7 nm. Apparent effect of stimulation with a relatively weak continuous illumination by UV light (375 nm wavelength) takes place for both the alternating-current electric field-dependent optical transmittance and the electro-optic amplitude-frequency modulation by thin films (25 µm thick) of the EPH/aerosil/7CB nanocomposite. The light-stimulated electro-optics of EPH-doped aerosil/7CB films and the corresponding reversible light control are achieved through trans-cis-trans photoisomerization of the photoactive agent EPH. As such, the initial electro-optical response of the studied photoactive nanocomposites is recovered with continuous blue-light illumination. The examined EPH/aerosil/7CB nanocomposites exhibit photo-controllable electro-optical response that is of practical interest.
In the paper the analysis of up-conversion (UC) luminescence in 0.5Yb2O3/(0.25-1)Eu2O3 (mol.%) co-doped germanate glass and optical fibre has been investigated. Up-conversion emission of bands at 591, 616, 652, 701 nm to which correspond Eu3+: 5D0 → 7F1, 5D0 → 7F2, 5D0 → 7F3, 5D0 → 7F4 transitions, respectively was obtained as a result of cooperative energy transfer between Yb3+ and Eu3+ ions. The highest up-conversion emission (Yb3+ → Eu3+ energy transfer efficiency η = 24%) was obtained in 0.5Yb2O3/0.75Eu2O3 co-doped glass. Comparison of up-conversion and down-conversion luminescence spectra of bulk glass, glass fibre and different length double-clad optical fibre (up to 5 m) showed subtle differences in shape of the spectrum. In comparison to down – conversion emission (λexc = 405 nm) main UC luminescence band is red-shifted by 2 nm and is characterized by 5 nm greater full – width half – maximum (FWHM).