Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.

Graphene is a very promising material for potential applications in many fields. Since manufacturing technologies of graphene are still at the developing stage, low-frequency noise measurements as a tool for evaluating their quality is proposed. In this work, noise properties of polymer thick-film resistors with graphene nano-platelets as a functional phase are reported. The measurements were carried out in room temperature. 1/f noise caused by resistance fluctuations has been found to be the main component in the specimens. The parameter values describing noise intensity of the polymer thick-film specimens have been calculated and compared with the values obtained for other thick-film resistors and layers used in microelectronics. The studied polymer thick-film specimens exhibit rather poor noise properties, especially for the layers with a low content of the functional phase.

Complaints and awareness about environmental low-frequency (LF) noise and infrasound (IS) have increased in recent years, but knowledge about perceptual mechanisms is limited. To evaluate the use of the brain’s frequency-following response (FFR) as an objective correlate of individual sensitivity to IS and LF, we recorded the FFR to monaurally presented IS (11 Hz) and LF (38 Hz) tones over a 30-phon range for 11 subjects. It was found that 11-Hz FFRs were often significant already at ~0 phon, steeply grew to 20 phon, and saturated above. In contrast, the 38-Hz FFR growth was relatively shallow and continued to 60 phon. Furthermore, at the same loudness level (30 phon), the 11-Hz FFR strength was significantly larger (4.5 dB) than for 38 Hz, possibly reflecting a higher phase synchronization across the auditory pathway. Overall, unexpected inter-individual variability as well as qualitative differences between the measured FFR growth functions and typical loudness growth make interpretation of the FFR as objective correlate of IS and LF sensitivity difficult.

Low-frequency noise measurements have long been recognized as a valuable tool in the examination of quality and reliability of metallic interconnections in the microelectronic industry. While characterized by very high sensitivity, low-frequency noise measurements can be extremely time-consuming, especially when tests have to be carried out over an extended temperature range and with high temperature resolution as it is required by some advanced characterization approaches recently proposed in the literature. In order to address this issue we designed a dedicated system for the characterization of the low-frequency noise produced by a metallic line vs temperature. The system combines high flexibility and automation with excellent background noise levels. Test temperatures range from ambient temperature up to 300◦C. Measurements can be completely automated with temperature changing in pre-programmed steps. A ramp temperature mode is also possible that can be used, with proper caution, to virtually obtain a continuous plot of noise parameters vs temperature.

A metrological verification of a high precision digital multimeter was made by the laboratory of calibration of programmable electrical multifunction instruments of the National Institute of Metrological Research (INRIM) in order to verify its accuracy and stability. The instrument had been tested for a period of six months for five low-frequency electrical quantities (DC and AC Voltage and Current and DC Resistance). Its stability and precision were compared with the accuracy specifications of the manufacturer. As a new approach, a performance index of the DMM was introduced and evaluated for each examined measurement point. The DMM showed a satisfactory agreement with its specifications to be considered at the level of other top-class DMMs and even better in some measurements points.

This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described. The gain calculations for local resistance noise are performed to evaluate the contribution to total noise from different areas of the layer. It was shown, through numerical calculations and noise measurements, that in four-point probe specimens, with separated current and voltage terminals, the non-resistance noise of the contact and the resistance noise of the layer can be identified. The four-point probe method is used to find the low frequency resistance noise of the GaSb layer with a different doping type. For n-type and p-type GaSb layers with low carrier concentrations, the measured noise is dominated by the non-resistance noise contributions from contacts. Low frequency resistance noise was identified in high-doped GaSb layers (both types). At room temperature, such resistance noise in an n-type GaSb layer is significantly larger than for p-type GaSb with comparable doping concentration.

This paper presents an approximate analytical model for estimating the transmission loss (TL) of a finite rectangular plate in the low frequency range, which is based on the modal summation approach (MSA) taking into account the modal radiation impedance and fluid loading. The mode-dependent radiation resistance is calculated using the Rayleigh integral. The fluid loading is taken into account through the natural frequency modified by the added mass. The results are compared with the ones of Statistical Energy Analysis (SEA) coupled with FEM and FEM coupled with BEM. In addition, the effects of the various vibration modes and the fluid loading on TL, and a way for reducing the calculation time are discussed.

A probable risk for different diseases has been reported due to exposure of peoples living in the vicinity of electrical substations and electrical workers. The aim of this paper is to examine and reduce the induced current density due to the power system field acting on human beings in the working environment, by using the spheroidal calculation model. The results obtained by means of computer programs developed by the author in the MATLAB environment are compared with the limit values given by the International Committee on Non-Ionizing Radiation Protection (ICNIRP) for demonstrating the degree of danger due to the induced current and have a certain guidance function for worker’s health to ensure their safety.

The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp transimpedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√ Hz, 3 nV/√ Hz, 0.95 nV/√Hz and 0.6 nV/√ Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A −3 dB frequency response is from ∼ 20 mHz to ∼ 600 kHz.