Szczegóły

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Tytuł artykułu

Design and analytical calculations of the width and arrangement of quantum well and barrier layers in GaN/AlGaN LED to enhance the performance

Tytuł czasopisma

Opto-Electronics Review

Rocznik

2021

Wolumin

29

Numer

4

Autorzy

Sharma, Lokesh ; Sharma, Ritu

Afiliacje

Sharma, Lokesh : Department of Electronics and Communication Engineering, Malaviya, National Institute of Technology, Jaipur, Rajasthan 302017, India ; Sharma, Ritu : Department of Electronics and Communication Engineering, Malaviya, National Institute of Technology, Jaipur, Rajasthan 302017, India

Słowa kluczowe

barrier ; multi-quantum well ; light emitting diode ; power efficiency ; quantum well

Wydział PAN

Nauki Techniczne

Zakres

141-147

Wydawca

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Bibliografia

  1. Lenk, R. & Lenk, C. Practical Lighting Design with LEDs. (2nd. ed.) (John Wiley & Sons, Ltd., 2017).
  2. , S. M. & Kwok, K. Ng, Physics of Semiconductor Devices. (4th ed.) (Wiley-Interscience, 2006).
  3. Van Zeghbroeck, B. Principles Of Semiconductor Devices. (Prentice-Hall, 2006).
  4. Schulte-Römer, N., Meier, J., Söding, M. & Dannemann, E. The LED paradox: how light pollution challenges experts to reconsider sustainable lighting. Sustainability 11, 6160 (2019). https://doi.org/10.3390/su11216160
  5. Sharma, L, & Sharma, R. Optimized design of narrow spectral linewidth nonpolar m-plane InGaN/GaN micro-scale light-emitting diode. J. Opt. 49, 397–402 (2020). https://doi.org/10.1007/s12596-020-00632-4
  6. Rashidi, A. et al. High-speed nonpolar InGaN/GaN LEDs for visible-light communication. IEEE Photonics Technol. Lett. 29, 381–384 (2017). https://doi.org/10.1109/LPT.2017.2650681
  7. Shi, J. et al. III-Nitride-based cyan light-emitting diodes with GHz bandwidth for high-speed visible light communicatio. IEEE Electron. Device Lett. 37, 894–897 (2016). https://doi.org/10.1109/LED.2016.2573265
  8. Gong, M. et al. Semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 percent. Appl. Phys. Express. 13, 091002 (2020). https://doi.org/10.35848/1882-0786/abac91
  9. Rouet-Leduc, B., Barros, K., Lookman, T. & Humphreys, C. J. Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Sci. Rep. 6, 24862 (2016). https://doi.org/10.1038/srep24862
  10. Piprek, J. Simulation-based machine learning for optoelectronic device design: perspectives, problems, and prospects. Opt. Quantum Electron. 53, 175 (2021). https://doi.org/10.1007/s11082-021-02837-8
  11. Usman, M., Munsif, M. & Abdur-Rehman, A., High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last B and composition-graded electron blocking layer Opt. Quantum Electron. 52, 320 (2020). https://doi.org/10.1007/s11082-020-02436-z
  12. Song, K., Mohseni, M. & Taghipour, F. Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection. Water Res. 94, 341–349 (2016). https://doi.org/10.1016/j.watres.2016.03.003
  13. Liao, Ch.-L. et al. High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer. IEEE Electron. Device Lett. 34, 611–613 (2013). https://doi.org/10.1109/LED.2013.2252457
  14. Quan, Z. et al. High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes. IEEE Photon. J. 8, (2016). https://doi.org/10.1109/JPHOT.2016.2596245
  15. Shi, J.-W. et al. III-nitride-based cyan light-emitting diodes with GHz bandwidth for high-speed visible light communication. IEEE Electron. Device Lett. 37, 894–897 (2016). https://doi.org/10.1109/LED.2016.2573265

Data

29.03.2022

Typ

Article

Identyfikator

DOI: 10.24425/opelre.2021.139530 ; ISSN 1896-3757

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