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Opto-Electronics Review

Opto-Electronics Review

Description
Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:


  • Optical Design and Applications,
  • Image Processing
  • Plasmonics, nanooptics, and metamaterials,
  • Optoelectronic Materials,
  • Micro-Opto-Electro-Mechanical Systems,
  • Infrared Physics and Technology,
  • Modelling of Optoelectronic Devices, Semiconductor Lasers

  • Technology and Fabrication of Optoelectronic Devices,
  • Photonic Crystals,
  • Laser Physics, Technology and Applications,
  • Optical Sensors and Applications,
  • Photovoltaics,
  • Biomedical Optics and Photonics

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Journal Metrics:
JCR Impact Factor 2022: 1.6
5 Year Impact Factor 2021: 2.038
SCImago Journal Rank (SJR) 2022: 0.414
Source Normalized Impact per Paper (SNIP) 2022: 0.815
CiteScore 2022: 4.4
Ministry of Education and Science 2021*: 100 points
* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN
ISSN 1896-3757
Publishers
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland


Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, nanooptics, and metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland


International Editorial Advisory Board


D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland


Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl


Technical Editors:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

E.Sadowska, e-mail: elzbieta.sadowska@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.


The journal content is available under the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/).

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Content

Opto-Electronics Review | 2021 | 29 | 3

1 Numerical analysis of the compositional graded quaternary barrier AlGaN-based ultraviolet-C light-emitting diode
Shahzeb Malik , Muhammad Usman , Masroor Hussain , Munaza Munsif , Sibghatullah Khan , Saad Rasheed , Shazma Ali
Opto-Electronics Review | 2021 | 29 | 3 | 80-84 | DOI: 10.24425/opelre.2021.135831
Keywords: ultraviolet light-emitting diodes efficiency quantum wells
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Abstract

The compositional graded quaternary barriers (GQBs) instead of ternary/conventional quantum barriers (QBs) have been used to numerically enhance the efficiency of AlGaN-based ultraviolet light-emitting diode (LED). The performance of LED with GQBs is examined through carrier concentrations, energy band diagrams, radiative recombination, electron and hole flux, internal quantum efficiency (IQE), and emission spectrum. As a function of the operating current density, a considerable reduction in efficiency droop is observed in the device with composition-graded quaternary barriers as compared to the conventional structure. The efficiency droop in case of a conventional LED is ~77% which decreased to ~33% in case of the proposed structure. Moreover, the concentration of electrons and holes across the active region in case of the proposed structure is increased to ~156% and ~44%, respectively.
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Authors and Affiliations

Shahzeb Malik
1
Muhammad Usman
1
ORCID: ORCID
Masroor Hussain
2
Munaza Munsif
1
Sibghatullah Khan
1
Saad Rasheed
1
Shazma Ali
1
  1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
  2. Faculty of Computer Sciences and Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
2 Performance evaluation of UFMC-based VLC systems using a modified SLM technique
Eslam M. Shalaby , E. Dessouky , Saleh Hussin
Opto-Electronics Review | 2021 | 29 | 3 | 85-90 | DOI: 10.24425/opelre.2021.135832
Keywords: universal filtered multi-carrier orthogonal frequency division multiplexing (OFDM) signal peak-to-average power ratio selected-mapping discrete Hartley transform precoding
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Abstract

Universal filtered multi-carrier (UFMC) is being studied as the favourable waveforms supporting the visible light communication broadcasting systems. However, the UFMC system faces a serious performance degradation on the transmitter side due to its high peak-to-average power ratio (PAPR). High PAPR of the signal is an analytical intention parameter for mobile networks, and it is necessary to minimize it as much as possible. This paper focuses on the PAPR reduction of the UFMC scheme. An efficient hybrid method of the PAPR reduction has been proposed and analysed through the Matlab™ simulation. The proposed hybrid scheme consists of a mixture of the selected-mapping method and the discrete Hartley transform precoding for a UFMC system (SLM-DHT-P-UFMC). The simulation results show that the proposed hybrid system has a better PAPR reduction performance compared to traditional SLM-UFMC and DHT-P-UFMC systems. Hence, SLM-DHT-P-UFMC is considered to be the suggested scheme in visible light communication broadcasting systems.
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Bibliography

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Authors and Affiliations

Eslam M. Shalaby
1
E. Dessouky
2
Saleh Hussin
2
  1. Electronics and Communication Engineering Department, Higher Technological Institute, 10th of Ramadan City, Sharqia, 44629 Egypt
  2. Electronics and Communication Engineering Department, Faculty of Engineering Menoufia University, Menoufia, 32511 Egypt
3 Signal processing for time resolved photoluminescence spectroscopy
Kacper Grodecki , Krzysztof Murawski , Jarosław Rutkowski , Andrzej Kowalewski , Jan Sobieski
Opto-Electronics Review | 2021 | 29 | 3 | 91-96 | DOI: 10.24425/opelre.2021.139038
Keywords: epitaxy HgCdTe photoluminescence time resolved photoluminescence
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Abstract

Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg(1-x)CdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
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Authors and Affiliations

Kacper Grodecki
1
ORCID: ORCID
Krzysztof Murawski
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID
Andrzej Kowalewski
1
ORCID: ORCID
Jan Sobieski
1
ORCID: ORCID
  1. Military University of Technology, 2 Kaliskiego St., Warsaw 00-908, Poland
4 Solar cells based on copper oxide and titanium dioxide prepared by reactive direct-current magnetron sputtering
Grzegorz Wisz , Paulina Sawicka-Chudy , Maciej Sibiński , Zbigniew Starowicz , Dariusz Płoch , Anna Góral , Mariusz Bester , Marian Cholewa , Janusz Woźny , Aleksandra Sosna-Głębska
Opto-Electronics Review | 2021 | 29 | 3 | 97-105 | DOI: 10.24425/opelre.2021.139039
Keywords: solar cells copper oxides titanium dioxide reactive magnetron sputtering
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Abstract

In this study, solar cells based on copper oxide and titanium dioxide were successfully manufactured using the reactive direct-current magnetron sputtering (DC-MS) technique with similar process parameters. TiO2/CuO, TiO2/Cu2O/CuO/Cu2O, and TiO2/Cu2O solar cells were manufactured via this process. Values of efficiencies, short-circuit current, short-circuit current density, open-circuit voltage, and maximum power of PV devices were investigated in the range of 0.02÷0.9%, 75÷350 µA, 75÷350 µA/cm2, 16÷550 mV, and 0.6÷27 µW, respectively. The authors compare solar cells reaching the best and the worst conversion efficiency results. Thus, only the two selected solar cells were fully characterized using I-V characteristics, scanning electron microscopy, X-ray diffraction, ellipsometry, Hall effect measurements, and quantum efficiency. The best conversion efficiency of a solar cell presented in this work is about three times higher in comparison with the authors’ previous PV devices.
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Authors and Affiliations

Grzegorz Wisz
1
ORCID: ORCID
Paulina Sawicka-Chudy
1
ORCID: ORCID
Maciej Sibiński
2
ORCID: ORCID
Zbigniew Starowicz
3
ORCID: ORCID
Dariusz Płoch
1
ORCID: ORCID
Anna Góral
3
Mariusz Bester
1
ORCID: ORCID
Marian Cholewa
1
Janusz Woźny
4
ORCID: ORCID
Aleksandra Sosna-Głębska
2
  1. Institute of Physics, College of Natural Science, University of Rzeszów, 1 Pigonia St., 35-317 Rzeszów, Poland
  2. Department of Semiconductor and Optoelectronic Devices, Łódź University of Technology, 211/215 Wólczańska St., 90-924 Łódź, Poland
  3. Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Kraków, Poland
  4. Department of Semiconductor and Optoelectronic Devices, Łódź University of Technology, 211/215Wólczańska St., 90-924 Łódź, Poland

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