Applied sciences

Opto-Electronics Review

Description

Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:

Optical Design and Applications,
Image Processing (without AI Algorithm Optimisation)
Plasmonics, nanooptics, and metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers

Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics

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Journal Metrics:

JCR Impact Factor 2023:	1.3
5 Year Impact Factor 2022:	2
SCImago Journal Rank (SJR) 2023:	0.267
Source Normalized Impact per Paper (SNIP) 2023:	0.525
CiteScore 2023:	1.9
Ministry of Education and Science 2021*:	100 points

* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN

ISSN 1896-3757

Publishers

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, nanooptics, and metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland

Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl

Technical Editors:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

E.Sadowska, e-mail: elzbieta.sadowska@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.

The journal content is available under the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/).

Volumes
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2025
2024
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2023
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2015

Content

Opto-Electronics Review | 2024 | 32 | 4

1 Why FETs detect a THz signal at a frequency far beyond their amplifying capabilities

Jacek Marczewski , Michał Zaborowski , Daniel Tomaszewski , Przemysław Zagrajek , Norbert Pałka

Opto-Electronics Review | 2024 | 32 | 4 | e151989 | DOI: 10.24425/opelre.2024.151989

Keywords: terahertz detection field-effect transistors Dyakonov-Shur theory resistive mixing surface plasmons

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Abstract

Field-effect transistors (FETs) are efficient detectors of THz radiation. Despite over three decades of research, controversy still exists regarding the detection mechanism. The article attempts to solve this problem systemically. Existing approaches to modeling THz detection are critically reviewed, including plasmonic, resistive mixing, hot carrier and thermal models. Limitations and inconsistencies of the first two approaches, along with some classical physics principles and experiments conducted, were identified. These include the facts that some models were formulated independently of material relaxation time constraints, and the plasmonic approach does not take into account the conditions for the formation of surface plasmon-polarons and does not describe the case of p-type devices (hole plasmons have never been experimentally recorded). Relevant measurements and theoretical considerations illustrate the inadequacy of these models. As a result of this analysis, thermoelectric models are expected to explain THz sensing by FETs.

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Authors and Affiliations

Jacek Marczewski

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ORCID:

Michał Zaborowski

e-mail:

ORCID:

Daniel Tomaszewski

e-mail:

ORCID:

Przemysław Zagrajek

e-mail:

ORCID:

Norbert Pałka

e-mail:

ORCID:

Institute of Microelectronics and Photonics, Lukasiewicz Research Center, al. Lotników 32/46, 02-668 Warsaw, Poland
Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw, Poland

2 Analysis of irradiation in OptiTouch system with optical detection

Maciej Zajkowski , Piotr Kardasz , Łukasz Budzyński , Grzegorz Masłowski

Opto-Electronics Review | 2024 | 32 | 4 | e151990 | DOI: 10.24425/opelre.2024.151990

Keywords: optical detection irradiation optical guide display

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Abstract

As part of the research and development project, a multi-touch multimedia system was implemented, working exclusively on the basis of optical technologies. The model of device with a diagonal of 42” was developed and made with 4K TV image technology and simultaneous detection in near infrared. The control of individual system modules was carried out on RaspberryPi microcomputers without typical operating system. The functionality of a conventional large-format display with unlimited multi-touch, QR code scanner, and a document scanner has been achieved in one housing. Luminance distribution tests were carried out in accordance with ANSI requirements and infrared radiation for detection work.

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Authors and Affiliations

Maciej Zajkowski

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ORCID:

Piotr Kardasz

e-mail:

ORCID:

Łukasz Budzyński

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ORCID:

Grzegorz Masłowski

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ORCID:

Faculty of Electrical Engineering, Department of Photonics, Electronic and Lighting Technology, Bialystok University of Technology, ul. Wiejska 45, 15-351 Białystok, Poland
Faculty of Electrical and Computer Engineering, Department of Electrical and Computer Engineering Fundamentals, Rzeszow University of Technology, al. Powstańców Warszawy 12, 35-959 Rzeszów, Poland

3 Analysis of the impact of post-process modifications on the properties of TiO₂ thin films with high-temperature stable anatase phase deposited by the electron beam evaporation method

Agata Obstarczyk , Ewa Mańkowska , Wiktoria Weichbrodt , Paulina Kapuścik , Wojciech Kijaszek , Michał Mazur

Opto-Electronics Review | 2024 | 32 | 4 | e151991 | DOI: 10.24425/opelre.2024.151991

Keywords: post-process annealing electron beam evaporation TiO2 coating high-temperature stable anatase

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Abstract

The paper describes the structural, optical, tribological, and mechanical properties of as‑prepared and annealed titanium dioxide (TiO₂) coatings. TiO₂ films were deposited by the electron beam evaporation (EBE) and additionally annealed at a temperature up to 800 °C using a tubular furnace. X-ray diffraction (XRD) analysis identified the amorphous phase of coatings as-prepared and annealed at 200 °C. The phase transition to anatase occurred at 400 °C, while annealing at 600 °C and 800 °C did not induce a phase transition to the rutile phase. The crystallite size increased with an annealing up to 40.4 nm at 800 °C. Raman spectroscopy confirmed the anatase phase in thin films annealed at 400 °C and above. A scanning electron microscope (SEM) images revealed surface morphology and grain structure changes after post-process high-temperature annealing. The optical transmission measurements showed a redshift in the fundamental absorption edge with increasing annealing temperature, accompanied by a decreased transparency level. The value of an optical band gap energy (E_g^opt) decreased to 2.77 eV for films annealed at 800 °C. Tribological tests revealed reduced scratch resistance with higher annealing temperatures, which was attributed to increased surface roughness and coating removal. Nanoindentation measurements showed a decrease in hardness with annealing temperature, attributed to changes in crystallite size and surface morphology. This comprehensive analysis of TiO₂ thin-film coatings showed that the post-process annealing should be carefully controlled for films used in optoelectronic applications.

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Authors and Affiliations

Agata Obstarczyk

e-mail:

ORCID:

Ewa Mańkowska

e-mail:

ORCID:

Wiktoria Weichbrodt

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ORCID:

Paulina Kapuścik

e-mail:

ORCID:

Wojciech Kijaszek

e-mail:

ORCID:

Michał Mazur

e-mail:

ORCID:

Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science & Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

4 Magnetron sputtered silicon thin films for solar cell applications

Marek Szindler , Magdalena M. Szindler , Krzysztof Lukaszkowicz , Krzysztof Matus , Paweł Nuckowski

Opto-Electronics Review | 2024 | 32 | 4 | e151992 | DOI: 10.24425/opelre.2024.151992

Keywords: surface engineering thin films magnetron sputtering silicon solar cells

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Abstract

One of the important directions of research in photovoltaics is the development of new thin-film technology, which can replace the currently used, more expensive bulk silicon technology. The article discusses the findings from research focused on optimizing the parameters for the deposition of silicon thin films with P-type electrical conductivity for applications in photovoltaics. The growth rate was determined depending on the change in substrate temperature using reflectometry and the influence of deposition time on optical properties was determined using UV/VIS spectroscopy. Photovoltaic structures were made on substrates with an ITO layer and their electrical parameters were measured. The authors applied the magnetron sputtering method to deposit the layers, selecting it over the commercially used the chemical vapor deposition (CVD) method. This replacement could alleviate the necessity for high temperatures and broaden the potential applications of thin-film solar cells.

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Authors and Affiliations

Marek Szindler

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ORCID:

Magdalena M. Szindler

e-mail:

ORCID:

Krzysztof Lukaszkowicz

e-mail:

ORCID:

Krzysztof Matus

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ORCID:

Paweł Nuckowski

Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, ul. Towarowa 7, 44-100 Gliwice, Poland
Department of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland
Materials Research Laboratory, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

5 Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors

Dawid Jarosz , Ewa Bobko , Małgorzata Trzyna-Sowa , Ewa Przeździecka , Marcin Stachowicz , Marta Ruszała , Piotr Krzemiński , Anna Juś , Kinga Maś , Renata Wojnarowska-Nowak , Oskar Nowak , Daria Gudyka , Brajan Tabor , Michał Marchewka

Opto-Electronics Review | 2024 | 32 | 4 | e152620 | DOI: 10.24425/opelre.2024.152620

Keywords: gallium arsenide gallium antimonide molecular beam epitaxy heteroepitaxy

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Abstract

The aim of this work was to improve the quality of the GaSb buffer layers on GaAs substrates using the molecular beam epitaxy (MBE) technology. The high quality of the GaSb buffer layers is one of the most important elements enabling the synthesis of good quality of type II superlattices (T2SL) structures for infrared applications. The main challenges in this regard are: compensation of the difference in lattice constants between GaAs and GaSb and obtaining the highest achievable surface quality of the final GaSb layer. In the literature, many authors describe different techniques to obtain the best quality of a GaSb buffer layer. In this work, we present the results of HRXRD, AFM, TOF-SIMS, SEM, and Nomarski optical microscope measurements obtained for 2 μm thick GaSb buffer layers. The GaSb layers are made according to different techniques and these results are compared with a GaSb buffer construction technique according to our own technology. During the processes, we also obtained an unintentional structure of one of the buffer layers, which allowed us to obtain very good results in terms of surface structure and crystallographic quality where FWHM in ω_RC scan was equal to 138 arcsec and RMS 0.20 nm proving that there is still a lot of work to be done in this area.

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Authors and Affiliations

Dawid Jarosz

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ORCID:

Ewa Bobko

e-mail:

ORCID:

Małgorzata Trzyna-Sowa

e-mail:

ORCID:

Ewa Przeździecka

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ORCID:

Marcin Stachowicz

e-mail:

ORCID:

Marta Ruszała

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ORCID:

Piotr Krzemiński

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ORCID:

Anna Juś

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ORCID:

Kinga Maś

e-mail:

ORCID:

Renata Wojnarowska-Nowak

e-mail:

ORCID:

Oskar Nowak

Daria Gudyka

Brajan Tabor

Michał Marchewka

e-mail:

ORCID:

Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

6 Direct characterisation of AM-to-PM phenomena in fast Si and InGaAs photodiodes

Grzegorz Budzyn , Jędrzej Barański

Opto-Electronics Review | 2024 | 32 | 4 | e152678 | DOI: 10.24425/opelre.2024.152678

Keywords: photodetector phase noise laser nonlinearities

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Abstract

The direct measurement method of AM-to-PM phenomena in fast silicon and InGaAs photodiodes is described. The setup is simple, relatively inexpensive and allows fast and precise measurements not only in a laboratory environment. During sample tests, the authors have found that the influence of bias voltage on the phase shift of an optical signal conversion is significant. The reported effect together with the influence of modulation depth on phase shift (AM-to-PM conversion) has a negative impact on an optical signal reception especially in coherent applications. The authors show that, with our proposed setups, it is possible to find optimal bias voltage and optimal optical power in order to reduce electrical phase noise of the photodetector.

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Authors and Affiliations

Grzegorz Budzyn

e-mail:

ORCID:

Jędrzej Barański

1 2

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ORCID:

Wroclaw University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Lasertex Co. Sp. z o.o., ul. Swojczycka 26, 51-501 Wroclaw, Poland

7 Glass-ceramic materials: influence of fluoride nanocrystals on emission properties of lanthanide ions

Joanna Śmiarowska , Natalia Pawlik , Joanna Pisarska , Wojciech A. Pisarski

Opto-Electronics Review | 2024 | 32 | 4 | e152680 | DOI: 10.24425/opelre.2024.152680

Keywords: glass-ceramic materials lanthanide ions optical properties visible emission

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Abstract

In this work, the oxyfluoride glass-ceramic materials containing LaF₃ nanocrystals, prepared by using the sol-gel method, were described. The influence of fluoride nanocrystals on the photoluminescence properties of selected lanthanide ions was determined. The experimental results obtained for nano-glass-ceramics were compared to the precursor xerogels. Those Ln³⁺-doped sol-gel materials with dispersed LaF₃ nanocrystals exhibit several visible emission bands. It was observed that heat-treatment process caused the elongation of the lifetimes of the ⁵D₀ state from τ = 0.22 ms to τ₁= 0.79 ms, τ₂= 9.76 ms (for Eu³⁺-doped materials) and of the ⁴F_9/2 state from τ = 0.027 ms to τ₁= 0.034 ms, τ₂= 1.731 ms (for Dy³⁺‑doped materials). The performed studies clearly revealed that luminescence behaviour also depends on an activator concentration and a distribution of energy levels of lanthanide ions.

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Authors and Affiliations

Joanna Śmiarowska

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ORCID:

Natalia Pawlik

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ORCID:

Joanna Pisarska

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ORCID:

Wojciech A. Pisarski

Institute of Chemistry, University of Silesia, ul. Szkolna 9, 40‐007 Katowice, Poland

8 Impact of DSSCs structure modification sensitized with phenothiazine derivative on photovoltaic performance

Paweł Gnida , Aneta Slodek , Mieczysław Łapkowski , Ewa Schab-Balcerzak

Opto-Electronics Review | 2024 | 32 | 4 | e152679 | DOI: 10.24425/opelre.2024.152679

Keywords: dye-sensitized solar cell N719 organic dyes phenothiazine derivatives co-sensitization

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Abstract

This paper presents the results of a study on the modification of dye-sensitized solar cells (DSSCs) using various phenothiazine derivatives, N719, and a mixture of these. The influence of the solvent used to prepare the dye solution, as well as the use of a TiO₂ blocking layer, the addition of a co-adsorbent, or a mixture of dyes with N719 are presented. Characterisation of photoanodes was carried out to determine the UV-Vis absorption properties, morphology, and photovoltaic parameters of the fabricated solar cells. The use of different solvents for the preparation of dye solutions resulted in DSSCs efficiencies in the range of 1.55–7.26%. The most advantageous was using an ACN:t-BuOH mixture, which provided the best efficiency. The application of further modifications in the form of the addition of chenodeoxycholic acid (CDCA), a blocking layer, and the use of a co-sensitization process resulted in an increase in the final efficiency to a value of 8.50%.

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Authors and Affiliations

Paweł Gnida

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ORCID:

Aneta Slodek

e-mail:

ORCID:

Mieczysław Łapkowski

1 3 4

e-mail:

ORCID:

Ewa Schab-Balcerzak

1 2

e-mail:

ORCID:

Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowskiej Str., 41-819 Zabrze, Poland
Institute of Chemistry, University of Silesia, 9 Szkolna Str., 40-006 Katowice, Poland
Faculty of Chemistry, Silesian University of Technology, 9 M. Strzody Str, 44-100 Gliwice, Poland
Centre for Organic and Nanohybrid Electronics, Silesian University of Technology, 22b Konarskiego Str., 44-100 Gliwice, Poland

9 Zinc-selective light diffuser for enhanced efficiency and reduced degradation in photovoltaic modules

Olgierd Jeremiasz , Grażyna Kulesza-Matlak , Piotr Sobik , Paweł Nowak , Klaudiusz Grübel , Kazimierz Drabczyk

Opto-Electronics Review | 2024 | 32 | 4 | e152683 | DOI: 10.24425/opelre.2024.152683

Keywords: PV module laser technologies light diffuser

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Abstract

This article introduces a zinc metal layer structure integrated into a standard photovoltaic (PV) module, potentially serving a double purpose: as a light reflecting and re-directing diffuser, increasing the PV module overall efficiency, offering anodic protection of Ag/Sn interface against corrosion within the PV module structure. The ethylene-vinyl acetate (EVA) cross-linking degree and peel force measurements were carried out to check the quality of the encapsulation process for the modified modules. Finally, the electrical series resistance of PV modules was measured showing that the modified PV module almost maintained its initial series resistance after exposure to damp-heat conditions of 85 °C, 85% relative humidity for 1000 h, while the unmodified PV module increased its resistance by 5% under the same conditions.

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Authors and Affiliations

Olgierd Jeremiasz

1 2

e-mail:

ORCID:

Grażyna Kulesza-Matlak

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ORCID:

Piotr Sobik

e-mail:

ORCID:

Paweł Nowak

e-mail:

ORCID:

Klaudiusz Grübel

Kazimierz Drabczyk

1 3

e-mail:

ORCID:

Institute of Metallurgy and Materials Science, Polish Academy of Sciences, ul. Reymonta 25, 30-059 Kraków, Poland
Helioenergia sp. z o. o., ul. Rybnicka 68, 44-238 Czerwionka-Leszczyny, Poland
University of Bielsko-Biala, ul. Willowa 2, 43-309 Bielsko-Biała, Poland

10 Study of the optical rotatory of potassium titanyl phosphate using the advanced dual-wavelength polarimetric method

Mykola Shopa , Nazar Ftomyn , Yaroslav Shopa

Opto-Electronics Review | 2024 | 32 | 4 | e152682 | DOI: 10.24425/opelre.2024.152682

Keywords: polarimetry dual-wavelength crystal optics birefringence optical activity

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Abstract

A dual-wavelength high-accuracy universal polarimeter was applied to the circular birefringence and optical activity measurement in potassium titanyl phosphate (KTP) nonlinear crystal. The experimental setup used two single-mode He-Ne lasers with close wavelengths of 594 and 633 nm as light sources. Measurement has been carried out for two crystal settings in directions of a 45-degree relative angle to the [100] and [010] crystallographic axes. Multiple light reflections inside the crystal sample were considered when processing the results of the polarimetric measurements. The results have been analysed using the optical transmission function for the polariser-sample-analyser system, and 2D intensity contour maps made it possible to determine the phase parameters, systematic errors, and eigenwaves ellipticity. It was found that the gyration tensor component of the KTP crystal is equal to g₁₂ = 1.4 ⋅ 10⁻⁵ which in terms of optical rotatory power corresponds to the very small magnitude of the rotation value of 2.3 deg/mm.

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Authors and Affiliations

Mykola Shopa

e-mail:

ORCID:

Nazar Ftomyn

e-mail:

ORCID:

Yaroslav Shopa

e-mail:

ORCID:

Department of Atomic, Molecular and Optical Physics, Gdańsk University of Technology, ul. Narutowicza 11/12, Gdańsk 80-233, Poland
Faculty of Physics, Ivan Franko National University of Lviv, Kyrylo & Mephodiy 8, Lviv 79005, Ukraine
Faculty of Mathematics and Natural Sciences, Cardinal Stefan Wyszynski University in Warsaw, ul. Wóycickiego 1/3, Warsaw 01-938, Poland

11 Self-noise reduction in a FOG-based rotational seismometer confirmed by Allan variance analysis

Piotr Zając , Piotr Amrozik , Rafał Kiełbik , Cezary Maj , Michał Szermer , Łukasz Starzak , Bartosz Pękosławski , Grzegorz Jabłoński , Wojciech Tylman , Anna T. Kurzych , Leszek R. Jaroszewicz

Opto-Electronics Review | 2024 | 32 | 4 | e152766 | DOI: 10.24425/opelre.2024.152766

Keywords: fibre-optic rotational seismometer fibre-optic gyroscope Allan variance noise angle random walk bias instability

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Abstract

Reducing noise in fibre-optic gyroscope (FOG)-based rotational seismometers is crucial in guaranteeing their applicability as future high-precision sensors. This paper presents a practical approach to noise analysis of a designed and manufactured FOG-based three-axis rotational seismometer. The performed measurements show that proper identification of noise sources and subsequent changes to the device’s configuration which addressed these noise issues, visibly improved the Allan deviation plot of the device. In particular, angle random walk was reduced from 100–200 to around 35 nrad/s/√Hz and bias instability – from several dozens down to single nrad/s. These improvements were achieved only by elimination or mitigation of the impact of all noise sources, without changing any optoelectronic components of the constructed device and without applying any additional post-processing methods.

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Authors and Affiliations

Piotr Zając

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ORCID:

Piotr Amrozik

e-mail:

ORCID:

Rafał Kiełbik

e-mail:

ORCID:

Cezary Maj

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ORCID:

Michał Szermer

e-mail:

ORCID:

Łukasz Starzak

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ORCID:

Bartosz Pękosławski

e-mail:

ORCID:

Grzegorz Jabłoński

e-mail:

ORCID:

Wojciech Tylman

e-mail:

ORCID:

Anna T. Kurzych

2 3

e-mail:

ORCID:

Leszek R. Jaroszewicz

2 3

e-mail:

ORCID:

Department of Microelectronics and Computer Science, Lodz University of Technology, ul. Wolczanska 221, 93-005 Lodz, Poland
Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Elproma Elektronika Sp. z o.o., ul. Dunska 2A, 05-152 Czosnow, Poland

12 Enhancement security and camouflage for free-space optical communication system reliance on switching between structured light beams

Kamal H. Kadem , Mohammed F. Mohammed

Opto-Electronics Review | 2024 | 32 | 4 | e152684 | DOI: 10.24425/opelre.2024.152684

Keywords: FSO communication structured light beams security beam shaping weather disturbances

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Abstract

This novel study uses structured light beams to enhance security and camouflage in free-space optical (FSO) communication systems. The system employs Bessel, Airy, and Vortex beams due to their properties, such as their unique shapes, adaptability to changing environmental conditions, and spread over long distances while keeping data portable. The structured light beams are dynamically switched during transmission to integrity and security over varying propagation distances and atmospheric conditions. In weak and moderate weather conditions, all three structured light beams can propagate up to 5 km while preserving data integrity. However, under stronger turbulence, the Bessel and Vortex beams can extend beyond 3 km, whereas the Airy beam is limited to a maximum distance of 2 km. The system multi-layered security approach includes beam shaping and selective switching between structured light beams to provide camouflage and enhance data protection, ensuring secure and reliable optical communication even in challenging environments. Simulations using the OptiSystem 18 program demonstrate the system robustness and effectiveness in a high-speed FSO communication.

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Authors and Affiliations

Kamal H. Kadem

Mohammed F. Mohammed

Department of Laser and Optoelectronics, Collage of Engineering, Al-Nahrain University, Jadriyah, Baghdad, Iraq

13 Numerical analysis of tunable edge filters based on hyperbolic metamaterials constructed from indium tin oxide and silicon oxide layers

Karol Sielezin , Michał Dudek , Urszula Chodorow , Janusz Parka

Opto-Electronics Review | 2024 | 32 | 4 | e152767 | DOI: 10.24425/opelre.2024.152767

Keywords: hyperbolic metamaterials (HMMs) indium tin oxide (ITO) transparent conductive oxides (TCOs) transfer matrix method (TMM) finite-difference time-domain (FDTD)

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Abstract

This paper presents and discusses the results of numerical studies of multi-layered hyperbolic metamaterials (HMMs). Such structures are built of alternating thin layers of conductive (e.g., metal or alternative conductive material) and dielectric materials. The thicknesses of these layers are much smaller than the operating wavelength, usually of the order of a few or tens of nanometres. Indium tin oxide (ITO), which is an alternative conductive plasmonic material from the group of transparent conductive oxides (TCOs), was used in the conductive layers. Silica (SiO₂) was used as a material in the dielectric layers. As a result of a simulation-based optimization, the layer thicknesses of two components forming the structure were chosen to be 20 nm each. Four variants of multilayer structures with different numbers of elementary cells forming the structure, N, for N = 5, 10, 15, and 20, respectively, were investigated by both analytical methods using the transfer matrix method (TMM) and simulation methods using finite-difference time-domain (FDTD). The results confirmed the hyperbolic dispersion of effective electric permittivity and tunability of the structure in the near-infrared (NIR) range. Moreover, a complete agreement of the results confirmed the complementarity of the two methods – both analytical TMM and simulation FDTD. The proposed HMMs structures may have potential applications as tunable edge filters.

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Authors and Affiliations

Karol Sielezin

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Michał Dudek

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Urszula Chodorow

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Janusz Parka

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Institute of Applied Physics, Military University of Technology, ul. gen. Kaliskiego 2, 00-908 Warsaw, Poland

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barwy Rzeczypospolitej Polskiej i wizerunek godła Rzeczypospolitej Polskiej

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Celem projektu jest wsparcie działalności wydawniczej Opto-Electronics Review w zakresie poprawy widoczności czasopisma na arenie krajowej i międzynarodowej oraz podwyższenia jakości edytorskiej prezentowanych treści.

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