This work reports the results of a study of Mo thin films synthesis by DC Pulsed Magnetron Sputtering method (PMS), operating at pulse main frequency of 100 kHz and modulated by the additional modulation frequency, driving in the range of 5-1000 Hz (modulated Pulse Magnetron Sputtering – mPMS). We have studied the influence of mPMS on plasma chemical reactions and mechanisms of layer growth using optical emission spectroscopy technique. Our experiment showed strong influence of mPMS method, on the morphology (scanning electron microscopy), phase composition (X-ray diffractometry) and electric properties (4-point probes method) of nanocrystalline and amorphous Mo films. From the utilitarian point of view, low value of resistivity – 43,2 μΩcm of synthesized Mo films predestines them as back contacts for thin solar cells CIGS. Our results revealed that additional modulation frequency should be considered as an important factor for optimization of films synthesis by means of PMS-based methods.
The aim of this work was to present a method of tissue culture research by measuring the impedance of cells cultured in the presence of nichrome. For this purpose, the Electric Cell-substrate Impedance Sensing system was used with a prototype substrate containing comb capacitors made of nichrome. Magnetron sputtering, photolithography and etching processes were used to produce the thin-film electrodes. In the experimental part, cells of mouse fibroblast cell line L929 were cultured according to the instruction manual in complete medium, under controlled growth conditions. Inoculation of arrays was carried out by 300 microliters per well of cell suspension at ~1.2×105 cells/ml. The results of the monitoring cells behavior in tissue culture indicate good cell viability and proliferative potential.
The paper reports the results of a physical modelling study of the production of a hypereutectic aluminium alloy to be used for making an alloy vapour source for operation in the magnetron. Within the study, targets from a hypereutectic aluminium-silicon alloy were made in laboratory conditions. Thus obtained material was subjected to heat treatment, porosity analysis, and the assessment of the microstructure and fitness for being used in the magnetron. The process of melting the hypereutectic Al-Si alloy was carried out at the Department of Foundry of the Czestochowa University of Technology. The investigation into the production of the alloy vapour source for the synthesis of the dielectric material from the hypereutectic aluminium alloy has confirmed.
Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes' coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al2O3. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300°C.