Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were
grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were
fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the
order of Jth ≈ 280 A/cm2 (for the resonator length L = 700 um) and differential efficiency η= 0.40 W/A (41%) from one
mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations
of above parameters, obtained by numerical modelling of devices were Jth ≈ 210 A/cm and η = 0.47 W/A from one mirror,
respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation
after 1500 hrs of CW operation at 35oC heat sink temperature at the constant optical power (50 mW) conditions.
Two methods for calculating transport parameters in semiconductor superlattices by applying Green’s functions are compared in the paper. For one of the methods, the Wannier functions method, where computations in the complex space and Wannier functions base are required, the Hamiltonian matrix is small in size and its elements depend solely on the energy. For the real space method, as it operates in the floating point domain and uses the Hamiltonian containing the elements dependent both on energy and position, the Hamiltonian matrix is larger in size. The size makes the method computationally challenging. To find the consequences of choosing one of the methods, a direct comparison between the computations, obtained for both methods with the same input parameters, was undertaken. The differences between the results are shown and explained. Selected simulations allowed us to discuss advantages and disadvantages of both methods. The calculations include transport parameters such as the density of states and the occupation functions, with regard to scattering processes where the self-consistent Born approximation was used, as well as the spatial distribution of electron concentration for two superlattices structures. The numerical results are obtained within the non-equilibrium Green’s functions formalism by solving the Dyson and the Keldysh equations.
In the paper the problem of modelling thermal properties of semiconductor devices with the use of compact models is presented. This class of models is defined and their development over the past dozens of years is described. Possibilities of modelling thermal phenomena both in discrete semiconductor devices, monolithic integrated circuits, power modules and selected electronic circuits are presented. The problem of the usefulness range of compact thermal models in the analysis of electronic elements and circuits is discussed on the basis of investigations performed in Gdynia Maritime University.
In the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first) significant coefficient (c0) representing Gaussian noise. If additional coefficients cr (where r > 0) appear it means that RTS noise (two-level as well as multiple-level) is detected. The coefficient representing the Gaussian component always has the highest value of all. The application of this method will be presented on the example of four devices, each with different noise (pure Gaussian noise signal, noise signal with two-level RTS noise, noise signal with three-level RTS noise and noise signal with not precisely visible occurrence of RTS noise).
Unlike traditional passive filters, modern active filters have the following multiple functions; harmonic filtering, damping, isolation and termination, reactive-power control for power factor correction and voltage regulation, load balancing, voltage-flicker reduction, and/or their combinations. Significant cost reductions in both power semiconductor devices and signal-processing devices have inspired manufactures to put active filters on the market. This paper deals with general pure active filters for power conditioning, and specific hybrid active filters for harmonic filtering of three-phase diode rectifiers, as well as traditional passive filters.
This paper presents the current state of a photoconductive semiconductor switch engineering. A photoconductive semiconductor switch is an electric switch with its principle of operation based on the phenomenon of photoconductivity. The wide application range, in both low and high-power devices or instruments, makes it necessary to take design requirements into account. This paper presents selected problems in the scope of designing photoconductive switches, taking into account, i.e. issues associated with the element trigger speed, uniform distribution of current density, thermal resistance, operational lifespan, and a high, local electric field generated at the location of electrodes. A review of semiconductor materials used to construct devices of this type was also presented.
Sensors designed by Polish engineers help detect traces of life beyond Earth. Adam Piotrowski of Vigo System tells us what else these devices can do.
Both a classical instantaneous power method and a method based on equations of instantaneous power orthogonal components balance have been used to analyze power processes in electric circuits with semiconductor elements. Automated method of forming instantaneous power harmonic components was used to obtain analytical expressions and numerical values of instantaneous power components of analyzed electric circuits. A coefficient for estimation of a semiconductor converter nonlinearity degree has been offered.
Variable speed and low voltage electrical drives are commonly operated by frequency converters. According to recent developments, there is a trend in the area of semi-conductors, that switching frequency and voltage slew rate will increase significantly. The aim of these semiconductors is to reduce the switching losses and to increase the switching frequency, which enables to reduce the size of passive components in the power- electric circuit. This results in less material effort and lower cost, for the power electronic component. However, electric motors operated by high slew rate inverters show problems in the winding insulation, which have to be analyzed. Such problems are well known for high voltage machines. Due to the increasing slew rate, this problematic occurs in low voltage machines nowadays as well. Here, the influence of fast switching semiconductors on the winding insulation system is studied, using accelerated ageing tests with fast switching high-voltage generators.
In this paper an analysis of the surface properties of (Ti,Pd,Eu)Ox thin films prepared by magnetron sputtering has been described. In particular, the results of composition and structure investigations were studied in relation to the surface state and optical properties. It was found that (Ti,Pd,Eu)Ox film was nanocrystalline and had a rutile structure. The average crystallites size was equal to 7.8 nm. Films were homogeneous and had densely packed grains. Investigation of the surface properties by XPS showed that titanium was present at 4+ state (in the TiO2form), palladium occurred as PdO2(also at 4+ state), while europium was in Eu2O3form (at 3+ state). In comparison with the unmodiffied TiO2, the coating with Pd and Eu additives had a rather high transparency (approx. 47%) in the visible light range, its optical absorption edge was shifted towards into the longer wavelengths (from 345 nm to 452 nm), and the width of optical energy gap Egopt was nearly twice lower (1.82 eV). Besides, the resistivity of (Ti,Pd,Eu)Ox at room temperature was 1×103 Wcm. In the case of the film as-deposited on Si substrate (p-type) the generation of photocurrent as a response to light beam excitation (λexc = 527 nm) was observed.
This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In2S3 thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method.
The Ag8SnSe6 argyrodite compound was synthesized by the direct melting of the elementary Ag, Sn and Se high purity grade stoichiometric mixture in a sealed silica ampoule. The prepared polycrystalline material was characterized by the X-ray diffraction (XRD), visible (VIS) and near-infrared (NIR) reflection and photoluminescence (PL) spectroscopy. XRD showed that the Ag8SnSe6 crystallizes in orthorhombic structure, Pmn21 space group with lattice parameters: а = 7.89052(6) Å, b = 7.78976(6) Å, c = 11.02717(8) Å. Photoluminescence spectra of the Ag8SnSe6 polycrystalline wafer show two bands at 1675 nm and 1460 nm. Absorption edge position estimated from optical reflectance spectra is located in the 1413–1540 nm wavelength range.
Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.
The effect of modifications in epi-side (top) gold metallization on a thermal performance and on power roll-over of blue-vio- let III-N-based p-up edge-emitting ridge-waveguide laser diode (RW EEL) was explored in this paper. The calculations were carried out using a two-dimensional self-consistent electrical-thermal model combined with a simplified optical model tuned to a RW EEL fabricated in the Institute of High Pressure Physics (Unipress). Our results suggest that with proper modifica- tions in the III-N-based RW EEL, excluding modifications in its inner structure, it is possible to considerably improve the thermal performance and, thus, increase the maximal output power.