Szczegóły Szczegóły PDF BIBTEX RIS Tytuł artykułu Performance Comparison of Stacked Dual-Metal Gate Engineered Cylindrical Surrounding Double-Gate MOSFET Tytuł czasopisma International Journal of Electronics and Telecommunications Rocznik 2021 Wolumin vol. 67 Numer No 1 Autorzy Dargar, Abha ; Srivastava, Viranjay M. Afiliacje Dargar, Abha : Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, 4041, South Africa ; Srivastava, Viranjay M. : Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, 4041, South Africa Słowa kluczowe short-channel effects ; metal-oxide-semiconductor transistor ; cylindrical surrounding double-gate ; dual-material gate ; microelectronics ; nanotechnology Wydział PAN Nauki Techniczne Zakres 29-34 Wydawca Polish Academy of Sciences Committee of Electronics and Telecommunications Data 2021.02.16 Typ Article Identyfikator DOI: 10.24425/ijet.2021.135940 ; eISSN 2300-1933 (since 2013) ; ISSN 2081-8491 (until 2012) Źródło International Journal of Electronics and Telecommunications; 2021; vol. 67; No 1; 29-34 <div class="test"></div>