Search results

Filters

  • Journals
  • Authors
  • Keywords
  • Date
  • Type

Search results

Number of results: 264
items per page: 25 50 75
Sort by:
Download PDF Download RIS Download Bibtex

Abstract

New ways of calculating narrow microparticle size distributions based on using the Tikhonov and the modified Twomey methods for the laser diffraction technique are presented. These allow to have reduced the broadening (over-smoothing) of the result occurring in these methods for narrow distributions both singular and their sum. The calculated singular distributions and their distribution sum were then approximated by a Gaussian function and a bimodal Gaussian function, respectively, using the Levenberg-Marquardt method. The angular distribution of scattering power was measured for polystyrene particles with radii of 0.676 µm and 1.573 µm, and for their sum. The tests were carried out for linearly polarized He-Ne laser light scattered by a dilute aqueous suspension of these particles. The results obtained were compared with those obtained with the nanoDS instrument (CILAS). It turned out that using the way based on the Twomey method, the parameters of the narrow distribution sought could be determined quite well.
Go to article

Authors and Affiliations

Andrzej Pawlata
1
Bartosz Bartosewicz
1
ORCID: ORCID

  1. Institute of Optoelectronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Download PDF Download RIS Download Bibtex

Abstract

Optical waveguides (WGs) are widely used as interconnects in integrated optical circuits both for telecommunication and sensing applications. There are different kind of optical WG designs that offers different guiding parameters, opening a vast number of possibilities. A silica-titania (SiO2:TiO2) rib WG is discussed and examined by a numerical analysis in this article with a great emphasis on the analysis of bending losses and optimization. A modal analysis for different basic parameters of the WG is presented with a detailed wavelength-based modal analysis. Various potential fabrication methods are discussed, however, a sol-gel method and dip-coating deposition technique are proposed for the low-cost development of such WGs. Moreover, an approach towards minimizing the bending losses by adding an upper cladding layer on the rib WG is presented and described.
Go to article

Authors and Affiliations

Muhammad Shahbaz
1
ORCID: ORCID
Łukasz Kozlowski
1
Muhammad A. Butt
1
ORCID: ORCID
Ryszard Piramidowicz
1
ORCID: ORCID

  1. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
Download PDF Download RIS Download Bibtex

Abstract

Titania dioxide (TiO2) layers were synthesized via the acid-catalysed sol-gel route using titania (IV) ethoxide, and then annealed at temperatures varying in the range of 150–700 °C. The research concerned the effect of annealing temperature on the structure of TiO2 layers, their surface morphology, and their optical properties. Further, X-ray diffractometry, and Raman spectroscopy were used to determine the structure of TiO2 layers. Scanning electron and atomic force microscopy were used to study the surface morphology of TiO2 layers. Transmittance, reflectance, absorption edge, and optical homogeneity were investigated by UV-VIS spectrophotometry, while the refractive index and thicknesses of TiO2 layers were measured using a monochromatic ellipsometer. Chromatic dispersion characteristics of the complex refractive index were determined using spectroscopic ellipsometry. Structural studies have shown that the TiO2 layers annealed at temperatures up to 300 °C are amorphous, while those annealed at temperatures exceeding 300 °C are polycrystalline containing only anatase nanocrystals with sizes increasing from 6 to 20 nm with the increase of the annealing temperature. Investigations on the surface morphology of TiO2 layers have shown that the surface roughness increases with the increase in annealing temperature. Spectrophotometric investigations have shown that TiO2 layers are homogeneous and the width of the indirect optical band gap varies with annealing temperature from 3.53 eV to 3.73 eV.

Go to article

Authors and Affiliations

Magdalena Zięba
1
ORCID: ORCID
Cuma Tyszkiewicz
1
ORCID: ORCID
Ewa Gondek
2
ORCID: ORCID
Katarzyna Wojtasik
2
ORCID: ORCID
Jacek Nizioł
3
ORCID: ORCID
Dominik Dorosz
4
ORCID: ORCID
Bartłomiej Starzyk
4
ORCID: ORCID
Patryk Szymczak
4
ORCID: ORCID
Wojciech Pakieła
5
ORCID: ORCID
Roman Rogoziński
1
ORCID: ORCID
Paweł Karasiński
1
ORCID: ORCID

  1. Department of Optoelectronics. Silesian University of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland
  2. Department of Physics, Cracow University of Technology, ul. Podchorążych 1, 30-084 Kraków, Poland
  3. Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland
  4. Faculty of Materials Science and Ceramics AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland
  5. Department of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

Authors and Affiliations

Piotr Martyniuk
ORCID: ORCID
Sarath D. Gunapala

Authors and Affiliations

Rana M. Nassar
1
Ashraf A. M. Khalaf
1
ORCID: ORCID
Ghada M. El-Banby
2
Fathi E. Abd El-Samie
3 4
Aziza I. Hussein
5
ORCID: ORCID
Walid El-Shafai
3 6

  1. Department of Electrical Engineering, Faculty of Engineering, Minia University, Minia 61111, Egypt
  2.   Department of Industrial Electronics and Control Engineering, Faculty of Electronic Engineering, Menoufia University, Menouf 32952, Egypt
  3. Department of Electronics and Electrical Communications Engineering, Faculty of Electronic Engineering, Menoufia University, Menouf 32952, Egypt
  4. Department of Information Technology, College of Computer and Information Sciences, Princess Nourah Bint Abdurrahman University, Riyadh 84428, Saudi Arabia
  5. Electrical and Computer Engineering Department, Effat University, Jeddah, Kingdom of Saudi Arabia
  6.  Security Engineering Laboratory, Department of Computer Science, Prince Sultan University, Riyadh 11586, Saudi Arabia
Download PDF Download RIS Download Bibtex

Abstract

Cellular mobile communication networks are experiencing an important evolution with the emerging deployment of 5G networks and the successive decline in the use of previous generations in the years to come. In parallel, policies promoting ecological transition are gaining social impact and economic interest and this seems to be the trend in the near future. In the telecommunications market, the shift between two dominant generations could be an important opportunity to introduce renewable energy sources to green the sector, reducing the carbon footprint of the world-wide extended activity. This work analyses the current situation and provides an insight into the possibilities to incorporate renewable energy supplies, specifically photovoltaics (as it seems to be the most promising among clean electric sources), perhaps combined with small wind turbines in off-grid systems. Paper also compares the characteristics of standard facilities in Spain and Poland, two different European countries in terms of weather and insolation hours.
Go to article

Authors and Affiliations

Iñigo Cuiñas
1
ORCID: ORCID
Katarzyna Znajdek
2
ORCID: ORCID
Maciej Sibiński
2
ORCID: ORCID

  1. Dept. of Signal Theory and Communications, Universidade de Vigo, atlanTTic Research Center, 36310 Vigo, Spain
  2. Dept. of Semiconductor and Optoelectronic Devices, Lodz University of Technology, Wólczańska 211–215, 90-001 Lodz, Poland
Download PDF Download RIS Download Bibtex

Abstract

As long as high resolution or long-range observation is to be achieved using infrared detection, it will be necessary to cool down the detector in order to reach the best sensitivity and dynamics. This paper describes different cooling solutions currently used for this purpose discussing advantages and drawbacks. Some guideline is given for cooler choice and selection. The focus is on rotary Stirling coolers illustrated by description of the RMs1 cooler dedicated to high operating temperature size, weight, and power infrared detectors. A user case study is presented with cooler power consumption and cool down time of the RMs1 cooler when integrated in IRnova’s Oden MW IDDCAs.
Go to article

Authors and Affiliations

René Griot
1
Christophe Vasse
1
Roel Arts
2
Ruslan Ivanov
3
Linda Höglund
3
Eric Costard 
3

  1. Thales LAS France, 4 rue Marcel Doret, 31700 Blagnac, France
  2. Thales Cryogenics bv, Hooge Zijde 14, 5626 DC Eindhoven, The Netherlands
  3.  IRnova, Isafjordsgatan 26, SE-164 40 Kista, Sweden
Download PDF Download RIS Download Bibtex

Abstract

Local weather conditions have an impact on the availability of free-space optical (FSO) communication. The variation in meteorological parameters, such as temperature, humidity, and wind speed, leads to variations of the refractive index along the transmission path. These refractive index inhomogeneities produced by atmospheric turbulence induce optical turbulence which is responsible for random fluctuations in the intensity of the laser beam that carries the signal (irradiance) called scintillations that can significantly degrade the performance of FSO systems. This paper aims to investigate the feasibility of deploying FSO communication technology under scintillation effects in any urban region and atmospheric environment. To achieve that, firstly by utilizing the Hufnagel-Vally day with the Sadot and Kopeika models together, the scintillation strength for a specified region, Sulaimani City in north-eastern Iraq as an example, has been estimated through the calculation of the refractive index structure parameter (Cn2) over a period of 10 years and it was found to be at the strong turbulence level. Secondly, from the same estimated parameter, the scintillation attenuation of the signal carrying the laser beam intensity can be calculated to investigate the feasibility of FSO communication using Optysistem-7 software. The optimal link distance for north-eastern Iraq (Sulaimani City) has been found to be within the limit of about 5.5 km. Analysing the max. Q-factor, bit-error rate and signal to noise ratio for an average of 120 months between 2013–2022 assessed the best and worst seasons for FSO.
Go to article

Authors and Affiliations

Aras S. Mahmood
1

  1. Physics Department, College of Education, University of Sulaimani, Sulaimani, Kurdistan Region / Iraq
Download PDF Download RIS Download Bibtex

Abstract

Visible light communication based on a filter bank multicarrier holds enormous promise for optical wireless communication systems, due to its high-speed and unlicensed spectrum. Moreover, visible light communication techniques greatly impact communication links for small satellites like cube satellites, and pico/nano satellites, in addition to inter-satellite communications between different satellite types in different orbits. However, the transmitted visible signal via the filter bank multicarrier has a high amount of peak-to-average power ratio, which results in severe distortion for a light emitting diode output. In this work, a scheme for enhancing the peak-to-average power ratio reduction amount is proposed. First, an algorithm based on generating two candidates signals with different peak-to-average power ratio is suggested. The signal with the lowest ratio is selected and transmitted. Second, an alternate direct current-biased approach, which is referred to as the addition reversed method, is put forth to transform transmitted signal bipolar values into actual unipolar ones. The performance is assessed through a cumulative distribution function of peak-to-average power ratio, bit error rate, power spectral density, and computational complexity. The simulation results show that, compared to other schemes in literature, the proposed scheme attains a great peak-to-average power ratio reduction and improves the bit the error rate performance with minimum complexity overhead. The proposed approach achieved about 5 dB reduction amount compared to companding technique, 5.5 dB compared to discrete cosine transform precoding, and 8 dB compared to conventional direct current bias of an optical filter bank multicarrier. Thus, the proposed scheme reduces the complexity overhead by 15.7% and 55.55% over discrete cosine transform and companding techniques, respectively.
Go to article

Authors and Affiliations

Radwa A. Roshdy
1
ORCID: ORCID
Aziza I. Hussein
2
ORCID: ORCID
Mohamed M. Mabrook
3 4
ORCID: ORCID
Mohammed A. Salem
ORCID: ORCID

  1. Department of Electrical Engineering, Higher Technological Institute, 10th of Ramadan City, Egypt
  2. Electrical & Computer Eng. Dept., Effat University, Jeddah, Saudi Arabia
  3. Space Communication Dept., Faculty of Navigation Science & Space Technology, Beni-Suef University, Beni-Suef, Egypt
  4. Department of Communication and Computer Engineering, Faculty of Engineering, Nahda University in Beni-Suef, Egypt
Download PDF Download RIS Download Bibtex

Abstract

The article presents the results of experiments on a detection system used for detecting signals from a miniature, low-energy micro-electro-mechanical system (MEMS) X-ray source. The authors propose to use a detection based on luminescence phenomena occurring in luminophore and scintillators to record the visual signal on a CMOS/CCD detector. The main part of the article is a review of various materials of scintillators and luminophores which would be adequate to convert low-energy X-ray radiation (E < 25 keV – it is a range not typical for conventional X-ray systems) to visible light. Measurements obtained for different energies, exposure times, and different targets have been presented and analysed.
Go to article

Authors and Affiliations

Paweł Urbański 
1
ORCID: ORCID
Tomasz Grzebyk
1
ORCID: ORCID

  1. Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technologyul. Janiszewskiego 11/17, 50-372 Wrocław, Poland
Download PDF Download RIS Download Bibtex

Abstract

In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice mid-wave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 µm at 90 K to 7.44 µm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.
Go to article

Authors and Affiliations

Maxime Bouschet
1 2
Vignesh Arounassalame
3
Anthony Ramiandrasoa
3
Jean-Philippe Perez
1
Nicolas Péré-Laperne
2
Isabelle Ribet-Mohamed
3
Philippe Christol
1

  1. IES, Université de Montpellier, CNRS, 860 Saint Priest St., F-34000 Montpellier, CEDEX 5, France
  2. LYNRED, BP 21, 364 de Valence Ave., 38113 Veurey-Voroize, France
  3. ONERA, Chemin de la Hunière, F-91761 Palaiseau Cedex, France
Download PDF Download RIS Download Bibtex

Abstract

The operation of narrow-gap semiconductor devices under non-equilibrium mode is used at temperatures where the materials are normally intrinsic. The phenomenon of minority carrier exclusion and extraction was particularly discussed in the case of the suppression of Auger thermal generation in heterojunction photodiodes, especially important in the long-wave infrared range. This paper shows that the reduction of the dark current in the HgCdTe photodiode operating in the mid-wave infrared range is primarily the result of suppression of the Shockley-Read-Hall generation in the non-equilibrium absorber. Under a reverse bias, the majority carrier concentration is held equal to the majority carrier doping level. This effect also leads to a decreased majority carrier population at the trap level and an effective increase in the carrier lifetime. The analysed device was with the following design: p+-Bp cap-barrier unit, p-type absorber doped at the level of 8 ·1015 cm−3, and wide-bandgap N+ bottom contact layer. At room temperature, the lowest dark current density of 3.12 ·10−1 A/cm2 was consistent with the theoretically predicted Shockley-Read-Hall suppression mechanism, about two times smaller than for the equilibrium case.
Go to article

Authors and Affiliations

Małgorzata Kopytko
1
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00 908 Warsaw, Poland
Download PDF Download RIS Download Bibtex

Abstract

This paper presents a probabilistic machine learning approach to approximate wavelength values for unmeasured positions on an opto-semiconductor wafer after epitaxy. Insufficient information about optical and opto-electronic properties may lead to undetected specification violations and, consequently, to yield loss or may cause product quality issues. Collection of information is restricted because physical measuring points are expensive and in practice samples are only drawn from 120 specific positions. The purpose of the study is to reduce the risk of uncertainties caused by sampling and measuring inaccuracy and provide reliable approximations. Therefore, a Gaussian process regression is proposed which can determine a point estimation considering measuring inaccuracy and further quantify estimation uncertainty. For evaluation, the proposed method is compared with radial basis function interpolation using wavelength measurement data of 6-inch InGaN wafers. Approximations of these models are evaluated with the root mean square error. Gaussian process regression with radial basis function kernel reaches a root mean square error of 0.814 nm averaged over all wafers. A slight improvement to 0.798 nm could be achieved by using a more complex kernel combination. However, this also leads to a seven times higher computational time. The method further provides probabilistic intervals based on means and dispersions for approximated positions.
Go to article

Authors and Affiliations

Stefan M. Stroka
1 2
ORCID: ORCID
Christian Heumann
1
ORCID: ORCID
Fabian Suhrke
2
Kathrin Meindl
2

  1. Department of Statistics, Faculty of Mathematics, Informatics and Statistics, LMU Munich, 80539 Munich, Germany
  2. ams-OSRAM International GmbH, 93055 Regensburg, Germany
Download PDF Download RIS Download Bibtex

Abstract

In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cut-off wavelength from 11 µm to 13 µm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙1011 H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.
Go to article

Authors and Affiliations

Clara Bataillon
1
Jean-Phillipe Perez
1
Rodolphe Alchaar
1
Alain Michez
1
Olivier Gilard
2
Olivier Saint-Pé
3
Philippe Christol
1

  1. University of Montpellier, 163 Auguste Broussonnet St., 34090 Montpellier, France
  2. CNES, 18 Edouard Belin Ave., 31400 Toulouse, France
  3. Airbus Defense & Space, 31 des Cosmonautes St., 31400 Toulouse, France
Download PDF Download RIS Download Bibtex

Abstract

The authors report two approaches, the first based on growth of lattice matched InGaAs/GaAsSb superlattice on InP substrate with tunable bandgap in the 2 to 3 µm range. The second approach is based on bulk random alloy InGaAsSb, which is tunable from 1.7 µm to 4.5 µm and lattice matched to the GaSb lattice constant. In each case, detector structures were fabricated and characterised. The authors have assessed the performance of these materials relative to commercially available extended short wave infrared devices through comparison to IGA-Rule 17 dark current performance level. A complementary barrier structure used in the InGaAsSb design showed improved quantum efficiency. The materials compare favourably to commercial technology and present additional options to address the challenging extended short wave infrared spectral band.
Go to article

Authors and Affiliations

Everett D. Fraser
1
Jiayi Shao
1
Paul W. Frensley
1
Beau D. Barnes
1
Kevin P. Clark
1
Yung-Chung Kao
1
Paul R. Pinsukanjana
1

  1. Intelligent Epitaxy Technology, Inc. 1250 E. Collins Blvd., Richardson, TX 75081, USA
Download PDF Download RIS Download Bibtex

Abstract

This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallow-etch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 µm with n-on-p polarity. A lateral diffusion length of 16 µm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 µm pitch, and a potential operating temperature up to 100 K is demonstrated.
Go to article

Authors and Affiliations

David Ramos
1 2
Marie Delmas
1
Ruslan Ivanov
1
Laura Žurauskaitė
1
Dean Evans
1
Susanne Almqvist
1
Smilja Becanovic
1
Per-Erik Hellström
2
Eric Costard
1
Linda Höglund
1

  1. IRnova AB, Isafjordsgatan 22, Kista 164 40, Sweden
  2.  School of Electrical Engineering and Computer Science KTH Royal Institute of Technology, Isafjordsgatan 22, Kista 164 40, Sweden
Download PDF Download RIS Download Bibtex

Abstract

Thermal imagers often work in extreme conditions but are typically tested under laboratory conditions. This paper presents the concept, design rules, experimental verification, and example applications of a new system able to carry out measurements of performance parameters of thermal imagers working under precisely simulated real working conditions. High accuracy of simulation has been achieved by enabling regulation of two critical parameters that define working conditions of thermal imagers: imager ambient temperature and background temperature of target of interest. The use of the new test system in the evaluation process of surveillance thermal imagers can bring about a revolution in thermal imaging metrology by allowing thermal imagers to be evaluated under simulated, real working conditions.
Go to article

Authors and Affiliations

Krzysztof Chrzanowski
1 2
ORCID: ORCID

  1.   Institute of Optoelectronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  2. INFRAMET, Bugaj 29a, Koczargi Nowe, 05-082 Stare Babice, Poland
Download PDF Download RIS Download Bibtex

Abstract

In recent years, type-II superlattice-based devices have completed the offer of the electronic industry in many areas of applications. Photodetection is one of them, especially in the mid-infrared wavelength range. It is due to the unique feature of a superlattice material, which is a tuneable bandgap. It is also believed that the dark current of superlattice-based photodetectors is strongly suppressed due to the suppression of the band-to-band tunnelling current in a superlattice material. This argument relies, however, on a semi-classical approach that treats superlattice as a bulk material with effective parameters extracted from the kp analysis. In the paper, a superlattice device is analysed on a quantum level: the non-equilibrium Green’s function method is applied to the two-band Hamiltonian of the InAs/GaSb superlattice p-i-n diode. The analysis concentrates on the band-to-band tunnelling with the aim to validate the correctness of a semi-classical description of the phenomenon. The results of calculations reveal that in a superlattice diode, the inter-band tunnelling occurs only for certain values of energy and in-plane momentum, for which electronic and hole sub-bands cross. The transitions occurring for vanishing in-plane momentum produce resonances in the current-voltage characteristics – the feature which was reported in a few experimental observations. This scenario is quite different from that occurring in bulk materials, where there is a range of energy-momentum pairs for which the band-to-band tunnelling takes place, and so current-voltage characteristics are free from any resonances. However, simulations show that, while not justified for a detailed analysis, the semi-classical description can be applied to superlattice-based devices for an ‘order of magnitude’ estimation of the band-to-band tunnelling current.
Go to article

Authors and Affiliations

Marcin Makowiec
1
ORCID: ORCID
Andrzej Kolek
1
ORCID: ORCID

  1. Department of Electronics Fundamentals, Rzeszow University of Technology, al. Powstańców Warszawy 12, Rzeszów 35-959, Poland
Download PDF Download RIS Download Bibtex

Abstract

Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 µm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
Go to article

Authors and Affiliations

Piotr Martyniuk
1
ORCID: ORCID
Djalal Benyahi
2
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
  2. Laboratoire des Systèmes Lasers, École Militaire Polytechnique, BP 17 Bordj El Bahri, 16111 Algiers, Algeria
Download PDF Download RIS Download Bibtex

Abstract

Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by bias-selectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dual-band detectors was also improved. Finally, a 20 μm pitch 640 × 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.
Go to article

Authors and Affiliations

Hyun-Jin Lee
1
ORCID: ORCID
Jun Ho Eom
1
Hyun Chul Jung
1
Ko-Ku Kang
1
Seong Min Ryu
1
Ahreum Jang
1
Jong Gi Kim
1
Young Ho Kim
1
Han Jung
1
Sun Ho Kim
2
Jong Hwa Choi
2

  1.  i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
  2. Agency of Defense Development, 34186 P.O.Box 35, Yuseong-gu, Daejeon, Republic of Korea
Download PDF Download RIS Download Bibtex

Abstract

The electronic quasi-bound state in the continuum concept is explored in an InGaAs/InAlAs heterostructure to create a voltage-tunable dual-colour quantum Bragg mirror detector. This heterostructure is based on one main quantum well embedded between two different superlattices. By bandgap engineering, each superlattice gives rise to quasi-bound states in the continuum with a preferential direction for electron extraction. Due to these states, the photovoltaic photocurrent presents a dual-colour response, one in a positive direction at 340 meV (3.6 µm), and one in a negative direction at 430 meV (2.9 µm). The simultaneous dual-colour detection can be switched to a single-colour detection (340 meV or 430 meV) by applying a bias voltage. At 77 K, the specific detectivity for simultaneous dual-colour is 2.5·108 Jones, while the single-colour detectivities are 2.6·109 Jones at +2.0 V and 7.7·108 Jones at −1.6 V for 340 meV and 430 meV, respectively.
Go to article

Authors and Affiliations

Germano M. Penello
1 2
ORCID: ORCID
Pedro H. Pereira
3 2
ORCID: ORCID
Vitor B. Sousa
3 2
Rudy M. S. Kawabata
3 2
Mauricio P. Pires
1 2
Patricia L. Souza
3 2

  1. Instituto de Física, Universidade Federal do Rio de Janeiro, R. Athos Silveira Ramos 149, Rio de Janeiro 21941-909, Brasil
  2. DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil
  3. LabSem/CETUC, Pontifícia Universidade Católica do Rio de Janeiro, R. Marquês de São Vicente 124, Gávea, Rio de Janeiro 22451-040, Brasil
Download PDF Download RIS Download Bibtex

Abstract

This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 µm to 14 µm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
Go to article

Authors and Affiliations

Paweł Madejczyk
1
ORCID: ORCID
Waldemar Gawron
1 2
ORCID: ORCID
Jan Sobieski
2
ORCID: ORCID
Piotr Martyniuk
1
ORCID: ORCID
Jarosław Rutkowski
1
ORCID: ORCID

  1. Institute of Applied Physics, Military University of Technology, 2 gen. Kaliskiego St., 00-908 Warsaw, Poland
  2. Vigo Photonics S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland
Download PDF Download RIS Download Bibtex

Abstract

Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 107 cm−2 are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at −0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 µm diameter photodiodes is in the 5–20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 µm, respectively, is demonstrated with a 1.8 µm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 µm. These results pave the way for a cost-effective technology based on group-IV semiconductors.
Go to article

Authors and Affiliations

Quentin Durlin
1
Abdelkader Aliane
1
Luc André
1
Hacile Kaya
1
Mélanie Le Cocq
1
Valérie Goudon
1
Claire Vialle
1
Marc Veillerot
1
Jean-Michel Hartmann
1

  1. Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France
Download PDF Download RIS Download Bibtex

Abstract

This work investigates the potential of InAs/GaSb superlattice detectors for the short-wavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10−6 A/cm2 at 200 K and 2.31·10−6 A/cm2 at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.
Go to article

Authors and Affiliations

Marie Delmas
1
David Ramos
1 2
Ruslan Ivanov
1
Laura Žurauskaitė
1
Dean Evans
1
David Rihtnesberg
1
Susanne Almqvist
1
Smilja Becanovic
1
Eric Costard
1
Linda Höglund
1

  1.  IRnova AB, Isafjordsgatan 22, Kista 164 40, Sweden
  2. School of Electrical Engineering and Computer Science KTH Royal Institute of Technology, Isafjordsgatan 22, Kista 164 40, Sweden

This page uses 'cookies'. Learn more