Applied sciences

Opto-Electronics Review

Description

Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:

Optical Design and Applications,
Image Processing
Plasmonics, nanooptics, and metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers

Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics

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Journal Metrics:

JCR Impact Factor 2022:	1.6
5 Year Impact Factor 2021:	2.038
SCImago Journal Rank (SJR) 2022:	0.414
Source Normalized Impact per Paper (SNIP) 2022:	0.815
CiteScore 2022:	4.4
Ministry of Education and Science 2021*:	100 points

* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN

ISSN 1896-3757

Publishers

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓŹWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, nanooptics, and metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Micro-Opto-Electro-Mechanical Systems
T.P. GOTSZALK, Wrocław University of Technology, Wrocław, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

A.I. DIROCHKA, Production Center ORION, Moscow, Russia

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

H.C. LIU, Shanghai Jiao Tong University, Shanghai, China

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Y.P. YAKOVLEV, Ioffe Physicotechnical Institute, St. Petersburg, Russia

J. ZIELŃSKI, Military University of Technology, Warsaw, Poland

Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl

Technical Editors:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

E.Sadowska, e-mail: elzbieta.sadowska@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.

The journal content is available under the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/).

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Content

Opto-Electronics Review | 2023 | 31 | special issue

1 Editorial Preface

Piotr Martyniuk , Sarath D. Gunapala

Opto-Electronics Review | 2023 | 31 | special issue | e144979

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Authors and Affiliations

Piotr Martyniuk

e-mail:

ORCID:

Sarath D. Gunapala

2 SRH suppression mechanism in a non-equilibrium MWIR HgCdTe photodiode

Małgorzata Kopytko

Opto-Electronics Review | 2023 | 31 | special issue | e144548 | DOI: 10.24425/opelre.2023.144548

Keywords: HgCdTe photodiode non-equilibrium conditions fully-depleted photodiode minority carrier lifetime generation rates

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Abstract

The operation of narrow-gap semiconductor devices under non-equilibrium mode is used at temperatures where the materials are normally intrinsic. The phenomenon of minority carrier exclusion and extraction was particularly discussed in the case of the suppression of Auger thermal generation in heterojunction photodiodes, especially important in the long-wave infrared range. This paper shows that the reduction of the dark current in the HgCdTe photodiode operating in the mid-wave infrared range is primarily the result of suppression of the Shockley-Read-Hall generation in the non-equilibrium absorber. Under a reverse bias, the majority carrier concentration is held equal to the majority carrier doping level. This effect also leads to a decreased majority carrier population at the trap level and an effective increase in the carrier lifetime. The analysed device was with the following design: p+-Bp cap-barrier unit, p-type absorber doped at the level of 8 ·1015 cm−3, and wide-bandgap N+ bottom contact layer. At room temperature, the lowest dark current density of 3.12 ·10−1 A/cm2 was consistent with the theoretically predicted Shockley-Read-Hall suppression mechanism, about two times smaller than for the equilibrium case.

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Authors and Affiliations

Małgorzata Kopytko

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00 908 Warsaw, Poland

3 Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure

Maxime Bouschet , Vignesh Arounassalame , Anthony Ramiandrasoa , Jean-Philippe Perez , Nicolas Péré-Laperne , Isabelle Ribet-Mohamed , Philippe Christol

Opto-Electronics Review | 2023 | 31 | special issue | e144549 | DOI: 10.24425/opelre.2023.144549

Keywords: infrared photodetector type-II superlattice barrier structure Ga-free transport; anisotropy

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Abstract

In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice mid-wave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 µm at 90 K to 7.44 µm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.

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Authors and Affiliations

Maxime Bouschet

1 2

Vignesh Arounassalame

Anthony Ramiandrasoa

Jean-Philippe Perez

Nicolas Péré-Laperne

Isabelle Ribet-Mohamed

Philippe Christol

IES, Université de Montpellier, CNRS, 860 Saint Priest St., F-34000 Montpellier, CEDEX 5, France
LYNRED, BP 21, 364 de Valence Ave., 38113 Veurey-Voroize, France
ONERA, Chemin de la Hunière, F-91761 Palaiseau Cedex, France

4 Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region

Quentin Durlin , Abdelkader Aliane , Luc André , Hacile Kaya , Mélanie Le Cocq , Valérie Goudon , Claire Vialle , Marc Veillerot , Jean-Michel Hartmann

Opto-Electronics Review | 2023 | 31 | special issue | e144550 | DOI: 10.24425/opelre.2023.144550

Keywords: Germanium (Ge) photodiode short-wave infrared detector

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Abstract

Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 107 cm−2 are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at −0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 µm diameter photodiodes is in the 5–20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 µm, respectively, is demonstrated with a 1.8 µm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 µm. These results pave the way for a cost-effective technology based on group-IV semiconductors.

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Authors and Affiliations

Quentin Durlin

Abdelkader Aliane

Luc André

Hacile Kaya

Mélanie Le Cocq

Valérie Goudon

Claire Vialle

Marc Veillerot

Jean-Michel Hartmann

Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France

5 MCT heterostructures for higher operating temperature infrared detectors designed in Poland

Paweł Madejczyk , Waldemar Gawron , Jan Sobieski , Piotr Martyniuk , Jarosław Rutkowski

Opto-Electronics Review | 2023 | 31 | special issue | e144551 | DOI: 10.24425/opelre.2023.144551

Keywords: MCT HgCdTe metal organic chemical vapour deposition infrared detectors higher operating temperature

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Abstract

This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 µm to 14 µm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.

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Authors and Affiliations

Paweł Madejczyk

e-mail:

ORCID:

Waldemar Gawron

1 2

e-mail:

ORCID:

Jan Sobieski

e-mail:

ORCID:

Piotr Martyniuk

e-mail:

ORCID:

Jarosław Rutkowski

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, 2 gen. Kaliskiego St., 00-908 Warsaw, Poland
Vigo Photonics S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland

6 Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation

Clara Bataillon , Jean-Phillipe Perez , Rodolphe Alchaar , Alain Michez , Olivier Gilard , Olivier Saint-Pé , Philippe Christol

Opto-Electronics Review | 2023 | 31 | special issue | e144552 | DOI: 10.24425/opelre.2023.144552

Keywords: displacement damage dose proton radiation total ionizing dose type-II superlattice photodetector

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Abstract

In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cut-off wavelength from 11 µm to 13 µm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙1011 H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.

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Authors and Affiliations

Clara Bataillon

Jean-Phillipe Perez

Rodolphe Alchaar

Alain Michez

Olivier Gilard

Olivier Saint-Pé

Philippe Christol

University of Montpellier, 163 Auguste Broussonnet St., 34090 Montpellier, France
CNES, 18 Edouard Belin Ave., 31400 Toulouse, France
Airbus Defense & Space, 31 des Cosmonautes St., 31400 Toulouse, France

7 Advances in type-II superlattice research at Fraunhofer IAF

Raphael Müller , Volker Daumer , Tsvetelina Hugger , Lutz Kirste , Wolfgang Luppold , Jasmin Niemasz , Robert Rehm , Tim Stadelmann , Mark Wobrock , Quankui Yang

Opto-Electronics Review | 2023 | 31 | special issue | e144553 | DOI: 10.24425/opelre.2023.144553

Keywords: metastructures for QE enhancement MWIR Ga-free T2SL nBn detectors MWIR/LWIR dual-band technology

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Abstract

Current advances in type-II superlattice (T2SL) research at Fraunhofer IAF are elaborated on in this paper. First, the use of metastructures for quantum efficiency (QE) enhancement in the longwave infrared (LWIR) is presented. Finite element modelling results are reported on that suggest a potential for doubling of the QE at certain wavelengths with the investigated device structure. Next, characterisation results of midwave infrared (MIWR) InAs/InAsSb T2SL nBn detectors are shown. The low, diffusion-limited dark current above 120 K and a QE of 60% are comparable to the state-of-the-art. Finally, groundwork for InAs/GaSb T2SL MWIR/LWIR dual-band detector arrays based on a back-to-back heterojunction diode device concept is presented. The dry etching technology allows for steep etch trenches and full pixel reticulation with a fill factor of about 70% at 12 µm pitch. The detector characterisation at 77 K and ±250 mV bias demonstrates the bias-switchable operation mode with dark current densities of 6.1·10−9 A/cm² in the MWIR and 5.3·10−4 A/cm² in the LWIR.

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Authors and Affiliations

Raphael Müller

Volker Daumer

Tsvetelina Hugger

Lutz Kirste

Wolfgang Luppold

Jasmin Niemasz

Robert Rehm

Tim Stadelmann

Mark Wobrock

Quankui Yang

Fraunhofer Institute for Solid State Physics IAF, Tullastraße 72, 79108 Freiburg, Germany

8 Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors

Christian P. Morath , Lilian K. Casias , Gilberto A. Umana-Membreno , Preston T. Webster , Perry C. Grant , Diana Maestas , Vincent M. Cowan , Lorenzo Faraone , Sanjay Krishna , Ganesh Balakrishnan

Opto-Electronics Review | 2023 | 31 | special issue | e144554 | DOI: 10.24425/opelre.2023.144554

Keywords: III-V infrared detectors bulk InAsSb InAsSb/InAs superlattice mobility carrier concentration

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Abstract

The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs0.91Sb0.09 alloy and InAs/InAs0.65Sb0.35 type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multi-carrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·105 cm2/V s and 8·103 cm2/V s, respectively and background dopant concentration levels were between 1014 and 1015 cm−3. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.

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Authors and Affiliations

Christian P. Morath

e-mail:

ORCID:

Lilian K. Casias

e-mail:

ORCID:

Gilberto A. Umana-Membreno

e-mail:

ORCID:

Preston T. Webster

Perry C. Grant

e-mail:

ORCID:

Diana Maestas

Vincent M. Cowan

e-mail:

ORCID:

Lorenzo Faraone

e-mail:

ORCID:

Sanjay Krishna

e-mail:

ORCID:

Ganesh Balakrishnan

e-mail:

ORCID:

U.S. Air Force Research Lab Space Vehicles Directorate, 3550 Kirtland AFB, 427 Aberdeen Ave., NM 87117, USA
Sandia National Laboratories, 1515 Eubank Blvd. SE, Albuquerque, NM 87185, USA
School of Electrical, Electronic, and Computer Engineering, The University of Western Australia, 25 Fairway, Crawley WA 6009, Australia
Department of Electrical Engineering, The Ohio State University, 2015 Neil Ave., Columbus, OH 43210, USA
Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106, USA

9 High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength

Marie Delmas , David Ramos , Ruslan Ivanov , Laura Žurauskaitė , Dean Evans , David Rihtnesberg , Susanne Almqvist , Smilja Becanovic , Eric Costard , Linda Höglund

Opto-Electronics Review | 2023 | 31 | special issue | e144555 | DOI: 10.24425/opelre.2023.144555

Keywords: infrared detectors short-wavelength infrared InAs/GaSb superlattice type-II superlattice

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Abstract

This work investigates the potential of InAs/GaSb superlattice detectors for the short-wavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10−6 A/cm2 at 200 K and 2.31·10−6 A/cm2 at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.

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Authors and Affiliations

Marie Delmas

David Ramos

1 2

Ruslan Ivanov

Laura Žurauskaitė

Dean Evans

David Rihtnesberg

Susanne Almqvist

Smilja Becanovic

Eric Costard

Linda Höglund

IRnova AB, Isafjordsgatan 22, Kista 164 40, Sweden
School of Electrical Engineering and Computer Science KTH Royal Institute of Technology, Isafjordsgatan 22, Kista 164 40, Sweden

10 Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors

David Ramos , Marie Delmas , Ruslan Ivanov , Laura Žurauskaitė , Dean Evans , Susanne Almqvist , Smilja Becanovic , Per-Erik Hellström , Eric Costard , Linda Höglund

Opto-Electronics Review | 2023 | 31 | special issue | e144556 | DOI: 10.24425/opelre.2023.144556

Keywords: infrared detector surface leakage type-II superlattice megapixel; n-on-p

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Abstract

This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallow-etch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 µm with n-on-p polarity. A lateral diffusion length of 16 µm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 µm pitch, and a potential operating temperature up to 100 K is demonstrated.

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Authors and Affiliations

David Ramos

1 2

Marie Delmas

Ruslan Ivanov

Laura Žurauskaitė

Dean Evans

Susanne Almqvist

Smilja Becanovic

Per-Erik Hellström

Eric Costard

Linda Höglund

IRnova AB, Isafjordsgatan 22, Kista 164 40, Sweden
School of Electrical Engineering and Computer Science KTH Royal Institute of Technology, Isafjordsgatan 22, Kista 164 40, Sweden

11 Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors

Piotr Martyniuk , Djalal Benyahi

Opto-Electronics Review | 2023 | 31 | special issue | e144557 | DOI: 10.24425/opelre.2023.144557

Keywords: molecular beam epitaxy superlattice X-ray diffraction III-V semiconductor

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Abstract

Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 µm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.

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Authors and Affiliations

Piotr Martyniuk

e-mail:

ORCID:

Djalal Benyahi

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Laboratoire des Systèmes Lasers, École Militaire Polytechnique, BP 17 Bordj El Bahri, 16111 Algiers, Algeria

12 Quantum simulations of band-to-band tunnelling in a type-II broken-gap superlattice diode

Marcin Makowiec , Andrzej Kolek

Opto-Electronics Review | 2023 | 31 | special issue | e144558 | DOI: 10.24425/opelre.2023.144558

Keywords: type-II superlattice broken-gap superlattice diode band-to-band tunnelling quantum transport non-equilibrium Green’s function two-band Hamiltonian

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Abstract

In recent years, type-II superlattice-based devices have completed the offer of the electronic industry in many areas of applications. Photodetection is one of them, especially in the mid-infrared wavelength range. It is due to the unique feature of a superlattice material, which is a tuneable bandgap. It is also believed that the dark current of superlattice-based photodetectors is strongly suppressed due to the suppression of the band-to-band tunnelling current in a superlattice material. This argument relies, however, on a semi-classical approach that treats superlattice as a bulk material with effective parameters extracted from the kp analysis. In the paper, a superlattice device is analysed on a quantum level: the non-equilibrium Green’s function method is applied to the two-band Hamiltonian of the InAs/GaSb superlattice p-i-n diode. The analysis concentrates on the band-to-band tunnelling with the aim to validate the correctness of a semi-classical description of the phenomenon. The results of calculations reveal that in a superlattice diode, the inter-band tunnelling occurs only for certain values of energy and in-plane momentum, for which electronic and hole sub-bands cross. The transitions occurring for vanishing in-plane momentum produce resonances in the current-voltage characteristics – the feature which was reported in a few experimental observations. This scenario is quite different from that occurring in bulk materials, where there is a range of energy-momentum pairs for which the band-to-band tunnelling takes place, and so current-voltage characteristics are free from any resonances. However, simulations show that, while not justified for a detailed analysis, the semi-classical description can be applied to superlattice-based devices for an ‘order of magnitude’ estimation of the band-to-band tunnelling current.

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Authors and Affiliations

Marcin Makowiec

e-mail:

ORCID:

Andrzej Kolek

e-mail:

ORCID:

Department of Electronics Fundamentals, Rzeszow University of Technology, al. Powstańców Warszawy 12, Rzeszów 35-959, Poland

13 Voltage-tunable dual-colour quantum Bragg mirror detector (QBMD)

Germano M. Penello , Pedro H. Pereira , Vitor B. Sousa , Rudy M. S. Kawabata , Mauricio P. Pires , Patricia L. Souza

Opto-Electronics Review | 2023 | 31 | special issue | e144559 | DOI: 10.24425/opelre.2023.144559

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Abstract

The electronic quasi-bound state in the continuum concept is explored in an InGaAs/InAlAs heterostructure to create a voltage-tunable dual-colour quantum Bragg mirror detector. This heterostructure is based on one main quantum well embedded between two different superlattices. By bandgap engineering, each superlattice gives rise to quasi-bound states in the continuum with a preferential direction for electron extraction. Due to these states, the photovoltaic photocurrent presents a dual-colour response, one in a positive direction at 340 meV (3.6 µm), and one in a negative direction at 430 meV (2.9 µm). The simultaneous dual-colour detection can be switched to a single-colour detection (340 meV or 430 meV) by applying a bias voltage. At 77 K, the specific detectivity for simultaneous dual-colour is 2.5·108 Jones, while the single-colour detectivities are 2.6·109 Jones at +2.0 V and 7.7·108 Jones at −1.6 V for 340 meV and 430 meV, respectively.

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Authors and Affiliations

Germano M. Penello

1 2

e-mail:

ORCID:

Pedro H. Pereira

3 2

e-mail:

ORCID:

Vitor B. Sousa

3 2

Rudy M. S. Kawabata

3 2

Mauricio P. Pires

1 2

Patricia L. Souza

3 2

Instituto de Física, Universidade Federal do Rio de Janeiro, R. Athos Silveira Ramos 149, Rio de Janeiro 21941-909, Brasil
DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil
LabSem/CETUC, Pontifícia Universidade Católica do Rio de Janeiro, R. Marquês de São Vicente 124, Gávea, Rio de Janeiro 22451-040, Brasil

14 Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure

Hyun-Jin Lee , Jun Ho Eom , Hyun Chul Jung , Ko-Ku Kang , Seong Min Ryu , Ahreum Jang , Jong Gi Kim , Young Ho Kim , Han Jung , Sun Ho Kim , Jong Hwa Choi

Opto-Electronics Review | 2023 | 31 | special issue | e144560 | DOI: 10.24425/opelre.2023.144560

Keywords: InAs/GaSb type-II superlattice dual-band detector dark current spectral quantum efficiency noise equivalent temperature difference

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Abstract

Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by bias-selectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dual-band detectors was also improved. Finally, a 20 μm pitch 640 × 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.

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Authors and Affiliations

Hyun-Jin Lee

e-mail:

ORCID:

Jun Ho Eom

Hyun Chul Jung

Ko-Ku Kang

Seong Min Ryu

Ahreum Jang

Jong Gi Kim

Young Ho Kim

Han Jung

Sun Ho Kim

Jong Hwa Choi

i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
Agency of Defense Development, 34186 P.O.Box 35, Yuseong-gu, Daejeon, Republic of Korea

15 Discussion around IR material and structure issues to go toward high performance small pixel pitch IR HOT FPAs

Olivier Gravrand , Nicolas Baier , Alexandre Ferron , Florent Rochette , Clément Lobre , Jocelyn Bertoz , Laurent Rubaldo

Opto-Electronics Review | 2023 | 31 | special issue | e144561 | DOI: 10.24425/opelre.2023.144561

Keywords: mid-wave infrared focal plane array high operating temperature small pitch modulation transfer function finite element method

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Abstract

In the last decade, infrared imaging detectors trend has gone for smaller pixels and larger formats. Most of the time, this scaling is carried out at a given total sensitive area for a single focal plane array. As an example, QVGA 30 µm pitch and VGA 15 µm pitch exhibit exactly the same sensitive area. SXGA 10 µm pitch tends to be very similar, as well. This increase in format is beneficial to image resolution. However, this scaling to even smaller pixels raises questions because the pixel size becomes similar to the IR wavelength, but also to the typical transport dimensions in the absorbing material. Hence, maintaining resolution for such small pixel pitches requires a good control of the modulation transfer function and quantum efficiency of the array, while reducing the pixel size. This might not be obtained just by scaling the pixel dimensions. As an example, bulk planar structures suffer from excessive lateral diffusion length inducing pixel-to-pixel cross talk and thus degrading the modulation transfer function. Transport anisotropy in some type II superlattice structures might also be an issue for the diffusion modulation transfer function. On the other side, mesa structures might minimize cross talk by physically separating pixels, but also tend to degrade the quantum efficiency due to a non-negligible pixel fill factor shrinking down the pixel size. This paper discusses those issues, taking into account different material systems and structures, in the perspective of the expected future pixel pitch infrared focal plane arrays.

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Authors and Affiliations

Olivier Gravrand

Nicolas Baier

Alexandre Ferron

Florent Rochette

Clément Lobre

Jocelyn Bertoz

Laurent Rubaldo

CEA-LETI, 17 des Martyrs St., 38054 Grenoble, France
Lynred, BP 21, 38113 Veurey-Voroize, France

16 Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP

Osvaldo M. Braga , Cristian A. Delfino , Rudy M. S. Kawabata , Luciana D. Pinto , Gustavo S. Vieira , Maurício P. Pires , Patricia L. Souza , Euclydes Marega , John A. Carlin , Sanjay Krishna

Opto-Electronics Review | 2023 | 31 | special issue | e144562 | DOI: 10.24425/opelre.2023.144562

Keywords: simulation residual doping recombination velocity surface passivation regrowth

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Abstract

The viability of epitaxial regrowth of non-intentionally doped InP to passivate lateral mesa surfaces of InGaAs photodiodes lattice-matched to InP is investigated, evaluating whether the residual doping of the regrown layer can be responsible for an unexpected increase of the surface current. The effect of residual doping is evaluated via numerical calculations of dark current, considering the range of doping concentrations expected for non-intentionally doped InP. The calculations show that the increase in dark current due to the residual doping of the regrown InP layer is not enough to justify the observed increase in surface current. On the other hand, the technique is still valid as a passivation method if the photodetector pixel is isolated by etching only the top contact layer.

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Authors and Affiliations

Osvaldo M. Braga

Cristian A. Delfino

Rudy M. S. Kawabata

Luciana D. Pinto

Gustavo S. Vieira

Maurício P. Pires

Patricia L. Souza

Euclydes Marega

John A. Carlin

Sanjay Krishna

Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil
LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil
Physics Institute, Federal University of Rio de Janeiro, Av. Athos da Silveira Ramos 149, 21941-909 Rio de Janeiro, Brazil
Universidade de São Paulo, USP-São Carlos, 13566-560 São Carlos, SP, Brazil
Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA

17 Grating-free high-x InP/InxGa1-xAs mid-wavelength infrared QWIP focal plane array

Cengiz Besikci , Saadettin V. Balcı , Onur Tanış , Oğuz O. Güngör , Esra S. Arpaguş

Opto-Electronics Review | 2023 | 31 | special issue | e144563 | DOI: 10.24425/opelre.2023.144563

Keywords: infrared imaging quantum well infrared photodetector

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Abstract

The authors report the characteristics of a diffraction-grating-free mid-wavelength infrared InP/In0.85Ga0.15As quantum well infrared photodetector focal plane array with a 640 × 512 format and a 15 m pitch. Combination of a normal incident radiation sensing ability of the high-x InxGa1-xAs quantum wells with a large gain property of the InP barriers led to a diffraction-grating-free quantum well infrared photodetector focal plane array with characteristics displaying great promise to keep the status of the quantum well infrared photodetector as a robust member of the new generation thermal imaging sensor family. The focal plane array exhibited excellent uniformity with noise equivalent temperature difference nonuniformity as low as 10% and a mean noise equivalent temperature difference below 20 mK with f/2 optics at 78 K in the absence of grating. Elimination of the diffraction-grating and large enough conversion efficiency (as high as 70% at a −3.5 V bias voltage) abolish the bottlenecks of the quantum well infrared photodetector technology for the new generation very small-pitch focal plane arrays.

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Authors and Affiliations

Cengiz Besikci

1 2

e-mail:

ORCID:

Saadettin V. Balcı

e-mail:

ORCID:

Onur Tanış

Oğuz O. Güngör

e-mail:

ORCID:

Esra S. Arpaguş

Micro and Nanotechnology Program, Graduate School of Natural and Applied Sciences, Middle East Technical University, Dumlupınar Bulvarı 1, 06800 Ankara, Turkey
Electrical and Electronics Engineering Department, Middle East Technical University, Dumlupınar Bulvarı 1, 06800 Ankara, Turkey

18 Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern

Jacek Boguski , Jarosław Wróbel , Sebastian Złotnik , Bogusław Budner , Malwina Liszewska , Łukasz Kubiszyn , Paweł P. Michałowski , Łukasz Ciura , Paweł Moszczyński , Sebastian Odrzywolski , Bartłomiej Jankiewicz , Jerzy Wróbel

Opto-Electronics Review | 2023 | 31 | special issue | e144564 | DOI: 10.24425/opelre.2023.144564

Keywords: wafer homogeneity wafer defect pattern surface roughness indium arsenide beryllium doping

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Abstract

The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and high-resolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.

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Authors and Affiliations

Jacek Boguski

e-mail:

ORCID:

Jarosław Wróbel

e-mail:

ORCID:

Sebastian Złotnik

e-mail:

ORCID:

Bogusław Budner

Malwina Liszewska

Łukasz Kubiszyn

e-mail:

ORCID:

Paweł P. Michałowski

Łukasz Ciura

Paweł Moszczyński

e-mail:

ORCID:

Sebastian Odrzywolski

Bartłomiej Jankiewicz

Jerzy Wróbel

1 6

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Institute of Optoelectronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
VIGO Photonics S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
Department of Electronics Fundamentals, Rzeszów University of Technology, W. Pola 12, 35-959 Rzeszów, Poland
Institute of Computer and Information Systems, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

19 InAs/InAsSb superlattice infrared detectors

David Z. Ting , Alexander Soibel , Arezou Khoshakhlagh , Sam A. Keo , Sir B. Rafol , Anita M. Fisher , Cory J. Hill , Brian J. Pepper , Yuki Maruyama , Sarath D. Gunapala

Opto-Electronics Review | 2023 | 31 | special issue | e144565 | DOI: 10.24425/opelre.2023.144565

Keywords: infrared detector type-II superlattice InAs/InAsSb complementary barrier infrared detectors strained layer superlattice

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Abstract

Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type-II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more in-depth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.

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Authors and Affiliations

David Z. Ting

Alexander Soibel

Arezou Khoshakhlagh

Sam A. Keo

Sir B. Rafol

Anita M. Fisher

Cory J. Hill

Brian J. Pepper

Yuki Maruyama

Sarath D. Gunapala

NASA Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109-8099, USA

20 Cryogenic solutions for IR detectors – a guideline for selection

René Griot , Christophe Vasse , Roel Arts , Ruslan Ivanov , Linda Höglund , Eric Costard

Opto-Electronics Review | 2023 | 31 | special issue | e144566 | DOI: 10.24425/opelre.2023.144566

Keywords: cryocoolers Stirling rotary coolers Stirling linear coolers pulse tube coolers infrared detectors

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Abstract

As long as high resolution or long-range observation is to be achieved using infrared detection, it will be necessary to cool down the detector in order to reach the best sensitivity and dynamics. This paper describes different cooling solutions currently used for this purpose discussing advantages and drawbacks. Some guideline is given for cooler choice and selection. The focus is on rotary Stirling coolers illustrated by description of the RMs1 cooler dedicated to high operating temperature size, weight, and power infrared detectors. A user case study is presented with cooler power consumption and cool down time of the RMs1 cooler when integrated in IRnova’s Oden MW IDDCAs.

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Authors and Affiliations

René Griot

Christophe Vasse

Roel Arts

Ruslan Ivanov

Linda Höglund

Eric Costard

Thales LAS France, 4 rue Marcel Doret, 31700 Blagnac, France
Thales Cryogenics bv, Hooge Zijde 14, 5626 DC Eindhoven, The Netherlands
IRnova, Isafjordsgatan 26, SE-164 40 Kista, Sweden

21 InAs light-to-heavy hole effective mass ratio determined experimentally from mobility spectrum analysis

Jarosław Wróbel , Gilberto A. Umana-Membreno , Jacek Boguski , Sebastian Złotnik , Andrzej Kowalewski , Paweł Moszczyński , Jarek Antoszewski , Lorenzo Faraone , Jerzy Wróbel

Opto-Electronics Review | 2023 | 31 | special issue | e144567 | DOI: 10.24425/opelre.2023.144567

Keywords: indium arsenide effective masses energy band warping magnetotransport mobility spectrum analysis

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Abstract

Careful selection of the physical model of the material for a specific doping and selected operating temperatures is a non-trivial task. In numerical simulations that optimize practical devices such as detectors or lasers architecture, this challenge can be very difficult. However, even for such a well-known material as a 5 µm thick layer of indium arsenide on a semi-insulating gallium arsenide substrate, choosing a realistic set of band structure parameters for valence bands is remarkable. Here, the authors test the applicability range of various models of the valence band geometry, using a series of InAs samples with varying levels of p-type doping. Carefully prepared and pretested the van der Pauw geometry samples have been used for magneto-transport data acquisition in the 20–300 K temperature range and magnetic fields up to ±15 T, combined with a mobility spectra analysis. It was shown that in a degenerate statistic regime, temperature trends of mobility for heavy- and light-holes are uncorrelated. It has also been shown that parameters of the valence band effective masses with warping effect inclusion should be used for selected acceptor dopant levels and range of temperatures.

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Authors and Affiliations

Jarosław Wróbel

e-mail:

ORCID:

Gilberto A. Umana-Membreno

e-mail:

ORCID:

Jacek Boguski

e-mail:

ORCID:

Sebastian Złotnik

e-mail:

ORCID:

Andrzej Kowalewski

e-mail:

ORCID:

Paweł Moszczyński

e-mail:

ORCID:

Jarek Antoszewski

e-mail:

ORCID:

Lorenzo Faraone

Jerzy Wróbel

1 4

e-mail:

ORCID:

Institute of Applied Physics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Dept. of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley WA 6009, Australia
Faculty of Cybernetics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland
Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland

22 Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates

Dmitri Lubyshev , Joel M. Fastenau , Michael Kattner , Philip Frey , Scott A. Nelson , Ryan Flick , Ying Wu , Amy W. K. Liu , Dennis E. Szymanski , Becky Martinez , Mark J. Furlong , Richard Dennis , Jason Bundas , Mani Sundaram

Opto-Electronics Review | 2023 | 31 | special issue | e144568 | DOI: 10.24425/opelre.2023.144568

Keywords: focal plane arrays InAs/InAsSb photodetectors long wavelength infrared type-II superlattice metamorphic buffers superlattice period reduction

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Abstract

Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on high-index substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.

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Authors and Affiliations

Dmitri Lubyshev

Joel M. Fastenau

Michael Kattner

Philip Frey

Scott A. Nelson

Ryan Flick

Ying Wu

Amy W. K. Liu

Dennis E. Szymanski

Becky Martinez

Mark J. Furlong

Richard Dennis

Jason Bundas

Mani Sundaram

IQE, Inc., 119 Technology Dr., Bethlehem, PA 18015, USA
IQE, Pascal Close, St. Mellons, Cardiff, CF3 0LW, UK
QmagiQ, LCC, 22 Cotton Rd., Unit H, Suite 180, Nashua, NH 03063, USA

23 Long wavelength type-II superlattice barrier infrared detector for CubeSat hyperspectral thermal imager

Sir B. Rafol , Sarath D. Gunapala , David Z. Ting , Alexander Soibel , Arezou Khoshakhlagh , Sam A. Keo , Brian J. Pepper , Cory J. Hill , Yuki Maruyama , Anita M. Fisher , Ashok Sood , John Zeller , Robert Wright , Paul Lucey , Miguel Nunes , Luke Flynn , Sachidananda Babu , Parminder Ghuman

Opto-Electronics Review | 2023 | 31 | special issue | e144569 | DOI: 10.24425/opelre.2023.144569

Keywords: type-II superlattice focal plane array infrared detector quantum efficiency noise equivalent difference temperature dark current density anti-reflective coating

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Abstract

The hyperspectral thermal imaging instrument for technology demonstration funded by NASA’s Earth Science Technology Office under the In-Space Validation of Earth Science Technologies program requires focal plane array with reasonably good performance at a low cost. The instrument is designed to fit in a 6U CubeSat platform for a low-Earth orbit. It will collect data on hydrological parameters and Earth surface temperature for agricultural remote sensing. The long wavelength infrared type-II strain layer superlattices barrier infrared detector focal plane array is chosen for this mission. With the driving requirement dictated by the power consumption of the cryocooler and signal-noise-ratio, cut-off wavelengths and dark current are utilized to model instrument operating temperature. Many focal plane arrays are fabricated and characterised, and the best performing focal plane array that fulfils the requirements is selected. The spectral band, dark current and 8–9.4 m pass band quantum efficiency of the candidate focal plane array are: 8–10.7 m, 2.1∙10−5 A/cm2, and 47%, respectively. The corresponding noise equivalent difference temperature and operability are 30 mK and 99.7%, respectively. Anti-reflective coating is deposited on the focal plane array surface to enhance the quantum efficiency and to reduce the interference pattern due to an absorption layer parallel surfaces cladding material.

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Authors and Affiliations

Sir B. Rafol

Sarath D. Gunapala

David Z. Ting

Alexander Soibel

Arezou Khoshakhlagh

Sam A. Keo

Brian J. Pepper

Cory J. Hill

Yuki Maruyama

Anita M. Fisher

Ashok Sood

John Zeller

Robert Wright

Paul Lucey

Miguel Nunes

Luke Flynn

Sachidananda Babu

Parminder Ghuman

Center for Infrared Photodetectors, Jet Propulsion Laboratory, California Institute of Technology Pasadena, California, USA
Magnolia Optical Technologies, Inc, Albany New York 12203, USA
Hawai'i Institute of Geophysics and Planetology, University of Hawai'i at Manoa, Honolulu, Hawaii, USA
NASA Earth Science Technology Office Greenbelt, Maryland, USA

24 Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Jonathan Ch. James , Terence L. Haran , Sarah E. Lane

Opto-Electronics Review | 2023 | 31 | special issue | e144570 | DOI: 10.24425/opelre.2023.144570

Keywords: infrared focal plane arrays III-V semiconductor infrared detector technologies infrared sensor performance modelling infrared sensor design mid-wave and long-wave infrared sensors

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Abstract

Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.

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Authors and Affiliations

Jonathan Ch. James

e-mail:

ORCID:

Terence L. Haran

Sarah E. Lane

Electro-Optical Systems Laboratory, Georgia Tech Research Institute, 925 Dalney St. NW, Atlanta, GA 30332, USA

25 Status of multi-wafer production MBE capabilities for extended SWIR III-V epi materials for IR detection

Everett D. Fraser , Jiayi Shao , Paul W. Frensley , Beau D. Barnes , Kevin P. Clark , Yung-Chung Kao , Paul R. Pinsukanjana

Opto-Electronics Review | 2023 | 31 | special issue | e144571 | DOI: 10.24425/opelre.2023.144571

Keywords: extended shortwave GaSb InP detector pn-CBIRD

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Abstract

The authors report two approaches, the first based on growth of lattice matched InGaAs/GaAsSb superlattice on InP substrate with tunable bandgap in the 2 to 3 µm range. The second approach is based on bulk random alloy InGaAsSb, which is tunable from 1.7 µm to 4.5 µm and lattice matched to the GaSb lattice constant. In each case, detector structures were fabricated and characterised. The authors have assessed the performance of these materials relative to commercially available extended short wave infrared devices through comparison to IGA-Rule 17 dark current performance level. A complementary barrier structure used in the InGaAsSb design showed improved quantum efficiency. The materials compare favourably to commercial technology and present additional options to address the challenging extended short wave infrared spectral band.

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Authors and Affiliations

Everett D. Fraser

Jiayi Shao

Paul W. Frensley

Beau D. Barnes

Kevin P. Clark

Yung-Chung Kao

Paul R. Pinsukanjana

Intelligent Epitaxy Technology, Inc. 1250 E. Collins Blvd., Richardson, TX 75081, USA

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Opto-Electronics Review was established in 1992 for the publication of scientific papers concerning optoelectronics and photonics materials, system and signal processing. This journal covers the whole field of theory, experimental verification, techniques and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. Papers covering novel topics extending the frontiers in optoelectronics and photonics are very encouraged. The main goal of this magazine is promotion of papers presented by European scientific teams, especially those submitted by important team from Central and Eastern Europe. However, contributions from other parts of the world are by no means excluded.

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All authors, referees and editors must declare any conflicting or competing interests relating to a given article. Competing interests through their potential influence on behavior or content or perception may undermine the objectivity, integrity, or perceived value of publication.

Peer Review

We are committed to prompt evaluation and publication of fully accepted papers in Opto-Electronics Review’s publications. To maintain a high-quality publication, all submissions undergo a rigorous review process.

Characteristics of the peer review process are as follows:

• Simultaneous submissions of the same manuscript to different journals will not be tolerated.

• Manuscripts with contents outside the scope will not be considered for review.

• Opto-Electronics Review is a single-blind review journal.

• Papers will be refereed by at least 2 experts as suggested by the editorial board.

• In addition, Editors will have the option of seeking additional reviews when needed. Authors will be informed when Editors decide further review is required.

• All publication decisions are made by the journal’s Editor-in-Chief based on the referees’ reports. Authors of papers that are not accepted are notified promptly.

• All submitted manuscripts are treated as confidential documents. We expect reviewers to treat manuscripts as confidential material.

• Editors and reviewers involved in the review process should disclose conflicts of interest resulting from direct competitive, collaborative, or other relationships with any of the authors, and remove oneself from cases in which such conflicts preclude an objective evaluation. Privileged information or ideas that are obtained through peer review must not be used for competitive gain.

• A reviewer should be alert to potential ethical issues in the paper and should bring these to the attention of the editor, including any substantial similarity or overlap between the manuscript under consideration and any other published paper of which the reviewer has personal knowledge. Any statement, observation, derivation, or argument that had been previously reported should be accompanied by the relevant citation.

• Personal criticism is inappropriate.

Plagiarism

Reproducing text from other papers without properly crediting the source (plagiarism) or producing many papers with almost the same content by the same authors (self-plagiarism) is not acceptable. Submitting the same results to more than one journal concurrently is unethical. Exceptions are the review articles. Authors may not present results obtained by others as if they were their own. Authors should acknowledge the work of others used in their research and cite publications that have influenced the direction and course of their study.

Plagiarism is not tolerated. All manuscripts submitted to Opto-Electronics Review will be checked for plagiarism (copying text or results from other sources) and self-plagiarism (duplicating substantial parts of authors’ own published work without giving the appropriate references) using the CrossCheck database (iThenticate plagiarism checker).

Duplicate submission

Simultaneous submissions of the same manuscript to different journals will not be tolerated. The submitted article will be removed without consideration.

Corrections and retractions

All authors have an obligation to inform and cooperate with journal editors to provide prompt retractions or correction of errors in published works.

• The journal will issue retractions if:

• There is clear evidence that the findings are unreliable, either as a result of misconduct (e.g., data fabrication or honest error - miscalculation or experimental error);

• The findings have previously been published elsewhere without proper cross-referencing, permission or justification (i.e., cases of redundant publication);

• It constitutes plagiarism;

• It reports unethical research.

• The journal will issue errata, if:

• A small portion of an otherwise reliable publication proves to be misleading (especially because of honest error);

• The author list is incorrect.

Other forms of misconduct include failure to meet clear ethical and legal requirements such as misrepresentation of interests, breach of confidentiality, lack of informed consent and abuse of research subjects or materials. Misconduct also includes improper dealing with infringements, such as attempts to cover up misconduct and reprisals on whistleblowers.

The primary responsibility for handling research misconduct is in the hands of those who employ the researchers. If a possible misconduct is brought to our attention, we will seek advice from the referees and the Editorial Board. If there is the evidence, we will resolve the matter by appropriate corrections in the printed and online journal; by refusing to consider an author's future work and by contacting affected authors and editors of other journals.

Human and Animal Rights

If the work involves the use of human subjects, the author should ensure that the work described has been carried out in accordance with The Code of Ethics of the World Medical Association (Declaration of Helsinki) for experiments involving humans; Uniform Requirements for manuscripts submitted to Biomedical journals. Authors should include a statement in the manuscript that informed consent was obtained for experimentation with human subjects. The privacy rights of human subjects must always be observed.

All animal experiments should comply with the ARRIVE guidelines and should be carried out in accordance with the EU Directive 2010/63/EU for animal experiments, and the authors should clearly indicate in the manuscript that such guidelines have been followed.